基于波长相关噪声显微镜的钙钛矿太阳能电池结构中电荷阱诱导的局域带隙变化的纳米尺度映射

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mingyu Jung, , , Alan Jiwan Yun, , , Yuhyeon Oh, , , Shashank Shekhar, , , Byungwoo Park, , and , Seunghun Hong*, 
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引用次数: 0

摘要

我们报道了太阳能电池结构中有机-无机卤化物钙钛矿薄膜中电荷阱诱导的局部带隙变化的纳米尺度映射。为了绘制,导电探针在不同波长的单色照明下扫描钙钛矿膜表面,同时绘制波长相关的光电流和电噪声。进一步分析测量图,获得薄膜中光导特性的空间分布,如光电流(Ipc)、短路电流(Isc)和电荷阱密度(Neff)。有趣的是,光电流和短路电流都与陷阱密度呈明显的幂律关系负相关。重要的是,通过应用具有不同波长局部外量子效率(EQE)的Tauc图方法,从波长相关的光电流图中获得了局部带隙(Eg)图,揭示了钙钛矿薄膜的空间变化。定量分析显示,带隙变化与有效陷阱密度的相关性为ΔEg∝Neff-0.01,表明在带边缘附近的局域陷阱有效地减小了带隙。我们的策略能够直接映射纳米级光导特性及其定量相关性,为光电器件的基础研究和实际应用提供了强大的工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Nanoscale Mapping of Charge-Trap-Induced Localized Bandgap Variations in Perovskite Solar Cell Structures via Wavelength-Dependent Noise Microscopy

Nanoscale Mapping of Charge-Trap-Induced Localized Bandgap Variations in Perovskite Solar Cell Structures via Wavelength-Dependent Noise Microscopy

Nanoscale Mapping of Charge-Trap-Induced Localized Bandgap Variations in Perovskite Solar Cell Structures via Wavelength-Dependent Noise Microscopy

We report the nanoscale mapping of charge-trap-induced local bandgap variations in an organic–inorganic halide perovskite film within a solar cell structure. For mapping, a conducting probe scanned the perovskite film surface under monochromatic illumination at different wavelengths to simultaneously map wavelength-dependent photocurrents and electrical noise. The measured maps were analyzed further to obtain the spatial distributions of photoconductive properties, such as photocurrent (Ipc), short-circuit current (Isc), and charge trap density (Neff), in the film. Interestingly, both the photocurrent and short-circuit current exhibited negative correlations with trap density following distinct power-law relationships. Importantly, a local bandgap (Eg) map was obtained from wavelength-dependent photocurrent maps by applying the Tauc plot method with local external quantum efficiencies (EQE) at different wavelengths, revealing spatial variations across the perovskite film. Quantitative analysis revealed a correlation between variations of bandgap and effective trap density following ΔEgNeff0.01, indicating that localized traps near the band edges effectively reduce the bandgaps. Our strategy enables direct mapping of nanoscale photoconductive properties and their quantitative correlations, providing a powerful tool for both fundamental research and practical applications in optoelectronic devices.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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