{"title":"通过缺陷工程在Mn: SrTiO3中形成氧空位驱动RRAM器件的坚固灯丝","authors":"Durairaj Murugan , Gowtham Velpandi , Ranjith Ramadurai","doi":"10.1016/j.matlet.2025.139571","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the resistive switching behavior of a Pt/Sr<sub>0.8</sub>Mn<sub>0.2</sub>TiO<sub>3±δ</sub>/Pt device with the thicknesses varying from 25 to 850 nm. The substitution of aliovalent dopants like Mn in SrTiO<sub>3</sub> facilitates the formation of n-type and p-type defects simultaneously. The filament formation via defect migration is expected to originate from both the positive and negatively biased electrodes and make a robust connection between the resistive states. The device exhibits stable switching behavior over 10<sup>3</sup> cycles and a consistent on/off ratio of 10<sup>2</sup>. The retention tests performed on 25 nm and higher thicknesses (up to ∼850 nm) of Mn: STO films suggest that it is a promising candidate for resistive switching devices.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139571"},"PeriodicalIF":2.7000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Robust filament formation via defect engineering in Mn: SrTiO3 for oxygen vacancy driven RRAM device\",\"authors\":\"Durairaj Murugan , Gowtham Velpandi , Ranjith Ramadurai\",\"doi\":\"10.1016/j.matlet.2025.139571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study investigates the resistive switching behavior of a Pt/Sr<sub>0.8</sub>Mn<sub>0.2</sub>TiO<sub>3±δ</sub>/Pt device with the thicknesses varying from 25 to 850 nm. The substitution of aliovalent dopants like Mn in SrTiO<sub>3</sub> facilitates the formation of n-type and p-type defects simultaneously. The filament formation via defect migration is expected to originate from both the positive and negatively biased electrodes and make a robust connection between the resistive states. The device exhibits stable switching behavior over 10<sup>3</sup> cycles and a consistent on/off ratio of 10<sup>2</sup>. The retention tests performed on 25 nm and higher thicknesses (up to ∼850 nm) of Mn: STO films suggest that it is a promising candidate for resistive switching devices.</div></div>\",\"PeriodicalId\":384,\"journal\":{\"name\":\"Materials Letters\",\"volume\":\"404 \",\"pages\":\"Article 139571\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2025-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167577X25016015\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25016015","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Robust filament formation via defect engineering in Mn: SrTiO3 for oxygen vacancy driven RRAM device
This study investigates the resistive switching behavior of a Pt/Sr0.8Mn0.2TiO3±δ/Pt device with the thicknesses varying from 25 to 850 nm. The substitution of aliovalent dopants like Mn in SrTiO3 facilitates the formation of n-type and p-type defects simultaneously. The filament formation via defect migration is expected to originate from both the positive and negatively biased electrodes and make a robust connection between the resistive states. The device exhibits stable switching behavior over 103 cycles and a consistent on/off ratio of 102. The retention tests performed on 25 nm and higher thicknesses (up to ∼850 nm) of Mn: STO films suggest that it is a promising candidate for resistive switching devices.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
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• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive