降低烧结温度的低介电常数硅酸盐石榴石Ca3Ni2SiV2O12的设计

IF 2.7 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yang li, Xueling Hu, Yanjun Liu, Zejun Jiang
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引用次数: 0

摘要

通过在四面体中加入Si和V,设计了一种新的石榴石组合物Ca3Ni2SiV2O12。采用常规固相反应法制备陶瓷,在1080 ~ 1160℃之间烧结。x射线衍射和Rietveld细化证实了在所有温度下形成纯立方石榴石相(空间群Ia-3d)。显微组织分析表明,随着烧结温度的升高,致密化和晶粒生长得到改善。在1140°C时获得了最佳的微波介电性能:介电常数(εᵣ)为8.2,Q × f值为21,960 GHz,谐振频率温度系数(τf)约为- 45 ppm/°C。这些结果表明,Si和V的战略性共取代有效地降低了烧结温度,同时保持了良好的介电性能,使Ca3Ni2SiV2O12成为低介电常数应用的潜在材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a low-permittivity silicate garnet Ca3Ni2SiV2O12 with reduced sintering temperature
A novel garnet composition, Ca3Ni2SiV2O12, was designed by incorporating both Si and V into the tetrahedral sites. The ceramics were synthesized via the conventional solid-state reaction method and sintered between 1080 and 1160 °C. X-ray diffraction and Rietveld refinement confirmed the formation of a pure cubic garnet phase (space group Ia-3d) across all temperatures. Microstructural analysis revealed that densification and grain growth improved with increasing sintering temperature. Optimal microwave dielectric properties were achieved at 1140 °C: a dielectric constant (εᵣ) of 8.2, a Q × f value of 21,960 GHz, and a temperature coefficient of resonant frequency (τf) of approximately −45 ppm/°C. These results demonstrate that the strategic co-substitution of Si and V effectively lowers the sintering temperature while maintaining commendable dielectric performance, making Ca3Ni2SiV2O12 a potential material for low-permittivity applications.
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来源期刊
Materials Letters
Materials Letters 工程技术-材料科学:综合
CiteScore
5.60
自引率
3.30%
发文量
1948
审稿时长
50 days
期刊介绍: Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
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