Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET

Carbon nanotubes exhibit exceptional properties such as high carrier mobility, near-ballistic transport, and nanoscale dimensions, making them promising candidates for next-generation nanoelectronic devices. Understanding the dependency of temperature and dielectric is essential for optimizing the performance of carbon nanotube field effect transistors (CNTFETs). In this study, a numerical simulation model of semiconducting CNTFETs is presented to determine the electrical properties in the ballistic regime. This paper focuses on the impact of temperature and dielectric constant to evaluate the input–output characteristic of CNTFET devices. Moreover, the study investigated the changes in threshold voltage as a function of gate dielectric constant and temperature in the nanometer regime. The findings emphasize the importance of integrating temperature and dielectric constant relationships in the design and optimization of CNTFETs, allowing for their effective incorporation into future electronic applications.