Comparing the optical and magneto-optical characteristics of asymmetrical Gaussian quantum wells in InAs, GaAs, and GaSb caused by intra- and inter-subband transitions

In this paper, using the operator projection (OP) method and the optically detected magneto-phonon resonance (ODMPR) effect, the optical and magneto-optical (MO) characteristics of asymmetrical Gaussian quantum wells (QWs) made of InAs, GaAs, and GaSb materials are studied. Specifically, the impacts of the electric field $F$, electronic concentration $N_e$, magnetic field $B$, QW barrier height $U_0$, temperature $T$, and QW thickness $L$ on the intensities and positions of both the intra- and inter-subband transition ODMPR peaks in the asymmetrical Gaussian QWs are thoroughly evaluated. Specially, how the FWHM is dependent on $F$, $N_e$, $B$, $U_0$, $T$, and $L$ also is completely taken into account. Moreover, the differences in the FWHM of both the intra- and inter-subband transition ODMPR peaks in InAs, GaAs, and GaSb materials are compared. Our findings valuably support the effective selection of materials for optoelectronic device manufacture.