Fabrication and characterization of two-dimensional Zn-doped Ga₂O₃-based oxide films using liquid metal alloys

This study aims to precisely synthesize nanoscale two-dimensional Zn doped with Ga₂O₃/In₂O₃ nanostructured layers via the transfer process using liquid Ga-Zn and EGaIn-Zn alloys at room temperature, comparing the differences in their properties. The central finding of the study confirms that zinc doping is an extremely effective strategy for precisely tuning the various properties of gallium oxide-based films. This tunability, the most significant outcome of the research, spans from the physical properties of the precursor liquid metal to the band structure and photoresponse of the final film. In terms of key quantitative results, the study clearly demonstrates effective bandgap engineering: in the gallium-based metal system, doping with 2 wt% zinc significantly reduces the film's bandgap from 5.03 eV to 4.33 eV; in the eutectic gallium-indium (EGaIn)-based metal system, the effect is even more pronounced, with the bandgap decreasing substantially from 4.56 eV to 3.28 eV. Additionally, experiments will be designed to enhance the photoelectric performance of metal compounds, providing a basis for selecting detector materials for different wavelengths in future applications.