ce掺杂MgO薄膜：改变高性能MOS光电二极管的电子和光学特性

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-28 DOI:10.1016/j.sna.2025.117116

G. Alan Sibu , V. Balasubramani , D. Siva Priya , Talat Ali , Mohd Shkir

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引用次数: 0

摘要

本研究提出了一种创新和可扩展的策略，通过使用喷射雾化器喷雾热解（JNSP）技术控制铈（Ce）的掺入来设计氧化镁（MgO）薄膜的功能特性。据我们所知，这是第一篇通过JNSP制备并优化用于光电器件集成的ce掺杂MgO薄膜的报道。Ce掺杂显著改变了MgO的结构和电子结构，当Ce含量为7 %时，MgO的晶体尺寸减小到2.98 nm，光学带隙扩大到3.82 eV，证明了量子约束和缺陷调制的增强。当集成到金属氧化物半导体（MOS）光电二极管中时，ce掺杂的MgO薄膜提供了40.37 %的光电流增强，实现了67.14 mA/W的响应率和0.84 eV的势垒高度提高。这些发现确立了Ce掺杂是定制MgO以获得卓越光电性能的有效途径，为下一代紫外光电探测器、光传感器和多功能光电平台提供了一种经济高效的通用途径。

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Ce-doped MgO thin films: Modifying electronic and optical properties for high-performance MOS photodiodes

This study presents an innovative and scalable strategy to engineer the functional properties of magnesium oxide (MgO) thin films through controlled Cerium (Ce) incorporation using the Jet Nebulizer Spray Pyrolysis (JNSP) technique. To the best of our knowledge, this is the first report on Ce-doped MgO thin films fabricated via JNSP and optimized for optoelectronic device integration. Ce doping induces significant modifications in the structural and electronic landscape of MgO, with crystallite size reduced to 2.98 nm at 7 % Ce content and an optical bandgap widened to 3.82 eV, evidencing enhanced quantum confinement and defect modulation. When integrated into a Metal-Oxide-Semiconductor (MOS) photodiode, the Ce-doped MgO films deliver a substantial 40.37 % enhancement in photocurrent, achieving a responsivity of 67.14 mA/W and an improved barrier height of 0.84 eV. These findings establish Ce doping as an effective route to tailor MgO for superior optoelectronic performance, offering a cost-efficient and versatile pathway for next-generation ultraviolet photodetectors, light sensors and multifunctional optoelectronic platforms.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...