Effects of pulse parameters on the reactive high-power impulse magnetron sputtering of ternary C–Cr–Zr thin films with Zr/Cr/Zr tri-cathodes in ethyne/argon mixing atmospheres

To develop new coating properties, reactive high-power impulse magnetron sputtering is continuously being studied to understand its complex mechanisms and overcome existing challenges. In this study, the effects of deposition parameters on C–Cr–Zr ternary films obtained using a Cr/Zr/Zr tri-cathode reactive high-power impulse magnetron sputtering system under various ethyne/argon mixing atmospheres were investigated by comparing the film composition and film deposition rate, and discharge waveforms of the cathodes. The C content of the films was proportional to the C₂H₂/Ar mixing ratio, and intensifying the substrate bias moderately decreased the C and Zr contents of the obtained films. The fractional deposition rate of Zr decreased more significantly with an increase in the C₂H₂/Ar ratio, reduction in the pulse width, and pulse duty than that of the Cr cathode because of the severe poisoning of the Zr cathode. This resulted in changes in the Cr/Zr ratios of the films under these deposition parameters. These findings revealed that the Zr ratio in the films can be adjusted by controlling the poisoning of the Zr cathode by tuning the pulse width and duty cycle.