Meeniga Srikanth Reddy , Debanjali Nath , Debajit Deb
{"title":"功率门控sram和基于超低功耗查找表的新型头脚多路复用器设计","authors":"Meeniga Srikanth Reddy , Debanjali Nath , Debajit Deb","doi":"10.1016/j.vlsi.2025.102566","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper we propose a two-level power gating technique which could incorporate significant leakage power reduction in pass transistor (PTL) and transmission gate (T-Gate) based look up table (LUT), designed using 45 nm generic library from cadence. First level power gating at SRAM array resulted in reduced subthreshold and gate leakage across the devices. A novel Header/Footer logic has been implemented to power-gate MUX logic of LUT. Unlike conventional header/footer schemes that only cut off the supply or ground to reduce leakage, our diode-connected header and feedback-controlled footer enable parallel output level restoration while simultaneously suppressing leakage. The feedback-controlled footer (NFD) ensures that weak logic levels from the multiplexer do not propagate to the output buffer, thereby reducing subthreshold and gate leakage. The Power-gated SRAM average power dissipation has been observed to reduce from 6.09 pW to 1.884 pW (write-1 operation). Power gating in the SRAM array resulted in a three order magnitude reduction in average power from 17.01<span><math><mi>μ</mi></math></span> W to 153.05 nW at pass transistor-based LUT level. Similar average power reduction up to 3-orders have also been observed for T-Gate based MUX-LUT with power gated SRAMs from 16.42<span><math><mi>μ</mi></math></span> W to 688.3 nW. The values were further reduced by more than three orders for both PTL and T-Gate based designs when novel header/footer logic was applied at the MUX level. Post-layout simulations further validate that parasitic effects reduce overall power dissipation compared to the pre-layout results for conventional and gated SRAM based LUTs. Additionally, the CLB implementation demonstrates ultra-low power of 389.8 pW in low-performance mode (HP=0), highlighting the practical advantage of the proposed architecture over conventional LUT-based designs. The implementation of proposed design impose no observable delay of data transfer between input of SRAM to final output of CLB.</div></div>","PeriodicalId":54973,"journal":{"name":"Integration-The Vlsi Journal","volume":"106 ","pages":"Article 102566"},"PeriodicalIF":2.5000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Power Gated-SRAM and novel header–footer multiplexer based ultra low power Look-Up Table design\",\"authors\":\"Meeniga Srikanth Reddy , Debanjali Nath , Debajit Deb\",\"doi\":\"10.1016/j.vlsi.2025.102566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this paper we propose a two-level power gating technique which could incorporate significant leakage power reduction in pass transistor (PTL) and transmission gate (T-Gate) based look up table (LUT), designed using 45 nm generic library from cadence. First level power gating at SRAM array resulted in reduced subthreshold and gate leakage across the devices. A novel Header/Footer logic has been implemented to power-gate MUX logic of LUT. Unlike conventional header/footer schemes that only cut off the supply or ground to reduce leakage, our diode-connected header and feedback-controlled footer enable parallel output level restoration while simultaneously suppressing leakage. The feedback-controlled footer (NFD) ensures that weak logic levels from the multiplexer do not propagate to the output buffer, thereby reducing subthreshold and gate leakage. The Power-gated SRAM average power dissipation has been observed to reduce from 6.09 pW to 1.884 pW (write-1 operation). Power gating in the SRAM array resulted in a three order magnitude reduction in average power from 17.01<span><math><mi>μ</mi></math></span> W to 153.05 nW at pass transistor-based LUT level. Similar average power reduction up to 3-orders have also been observed for T-Gate based MUX-LUT with power gated SRAMs from 16.42<span><math><mi>μ</mi></math></span> W to 688.3 nW. The values were further reduced by more than three orders for both PTL and T-Gate based designs when novel header/footer logic was applied at the MUX level. Post-layout simulations further validate that parasitic effects reduce overall power dissipation compared to the pre-layout results for conventional and gated SRAM based LUTs. Additionally, the CLB implementation demonstrates ultra-low power of 389.8 pW in low-performance mode (HP=0), highlighting the practical advantage of the proposed architecture over conventional LUT-based designs. The implementation of proposed design impose no observable delay of data transfer between input of SRAM to final output of CLB.</div></div>\",\"PeriodicalId\":54973,\"journal\":{\"name\":\"Integration-The Vlsi Journal\",\"volume\":\"106 \",\"pages\":\"Article 102566\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Integration-The Vlsi Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167926025002238\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integration-The Vlsi Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167926025002238","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
Power Gated-SRAM and novel header–footer multiplexer based ultra low power Look-Up Table design
In this paper we propose a two-level power gating technique which could incorporate significant leakage power reduction in pass transistor (PTL) and transmission gate (T-Gate) based look up table (LUT), designed using 45 nm generic library from cadence. First level power gating at SRAM array resulted in reduced subthreshold and gate leakage across the devices. A novel Header/Footer logic has been implemented to power-gate MUX logic of LUT. Unlike conventional header/footer schemes that only cut off the supply or ground to reduce leakage, our diode-connected header and feedback-controlled footer enable parallel output level restoration while simultaneously suppressing leakage. The feedback-controlled footer (NFD) ensures that weak logic levels from the multiplexer do not propagate to the output buffer, thereby reducing subthreshold and gate leakage. The Power-gated SRAM average power dissipation has been observed to reduce from 6.09 pW to 1.884 pW (write-1 operation). Power gating in the SRAM array resulted in a three order magnitude reduction in average power from 17.01 W to 153.05 nW at pass transistor-based LUT level. Similar average power reduction up to 3-orders have also been observed for T-Gate based MUX-LUT with power gated SRAMs from 16.42 W to 688.3 nW. The values were further reduced by more than three orders for both PTL and T-Gate based designs when novel header/footer logic was applied at the MUX level. Post-layout simulations further validate that parasitic effects reduce overall power dissipation compared to the pre-layout results for conventional and gated SRAM based LUTs. Additionally, the CLB implementation demonstrates ultra-low power of 389.8 pW in low-performance mode (HP=0), highlighting the practical advantage of the proposed architecture over conventional LUT-based designs. The implementation of proposed design impose no observable delay of data transfer between input of SRAM to final output of CLB.
期刊介绍:
Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics:
Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.