Transparent antistatic pressure-sensitive adhesive (PSA) films achieved via high aspect ratio Ag-SnO2NWs conductive filler

Silicone pressure-sensitive adhesive (PSA) is an emerging and widely used packaging material for electronic components, yet it faces increasing challenges in meeting the antistatic property and optical transparency demands of modern electronic devices. Although high-aspect-ratio nanomaterials such as MXene, carbon-based materials, and silver nanowires (AgNWs) are commonly employed as conductive fillers in PSA to enhance antistatic performance and transparency, their high cost and complex synthesis processes hinder widespread commercialization. In this study, we developed a simple coprecipitation method to synthesize one-dimensional SnO₂ nanowires (NWs) with high aspect ratio, followed by a chemical deposition process to fabricate Ag-SnO₂ NWs as conductive fillers for transparent antistatic films. Owing to the superior electrical conductivity (1.25 × 10⁵ S/m) and excellent dispersion stability of high aspect ratio Ag-SnO₂NWs, even with a weight fraction as low as 2.5 %, the antistatic property of Ag-SnO₂/PSA films is significantly improved. The surface resistance of the Ag-SnO₂/PSA films decreases from 10¹² Ω to 10⁶ Ω, with visible light transmittance as high as 75 %. In addition, the Ag-SnO₂/PSA films still have a peel strength retention rate 81.25 % and exhibit strong durability and stability. The Ag-SnO₂/PSA films show excellent comprehensive property in the field of transparent antistatic material, demonstrating its potential use as antistatic packaging for electronic devices and transparent antistatic films.