{"title":"真空和深紫外激发慢衰发光动力学的测量","authors":"D.S. Glazunov, E.F. Martynovich","doi":"10.1016/j.sna.2025.117081","DOIUrl":null,"url":null,"abstract":"<div><div>Simple and inexpensive experimental methods and means for measuring the kinetics of long-term, including delayed, luminescence of various media excited by VUV and DUV radiation pulses have been developed. An analysis of physical and mathematical models of luminescent media in which two time components of significantly different durations with the same quantum yield are simultaneously excited has been performed. It has been shown that when using nano- or picosecond excitation pulses, the intensity of fast components exceeds the intensity of slow components by 4–5 decimal orders. Due to nonlinear distortions of signals in photodetector paths, this complicates the use of simple methods of direct oscillography for studying the kinetics of slow luminescence components. Sources of quasi-rectangular pulses of micro-, milli- and second duration have been created based on VUV and DUV excilamps. Tests of the measuring system were carried out with the study of the kinetics of long-term luminescence of diamond, ruby, and leucosapphire irradiated with fast neutrons.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"395 ","pages":"Article 117081"},"PeriodicalIF":4.9000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Measurements of the kinetics of slowly decaying luminescence excited by vacuum and deep ultraviolet radiation\",\"authors\":\"D.S. Glazunov, E.F. Martynovich\",\"doi\":\"10.1016/j.sna.2025.117081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Simple and inexpensive experimental methods and means for measuring the kinetics of long-term, including delayed, luminescence of various media excited by VUV and DUV radiation pulses have been developed. An analysis of physical and mathematical models of luminescent media in which two time components of significantly different durations with the same quantum yield are simultaneously excited has been performed. It has been shown that when using nano- or picosecond excitation pulses, the intensity of fast components exceeds the intensity of slow components by 4–5 decimal orders. Due to nonlinear distortions of signals in photodetector paths, this complicates the use of simple methods of direct oscillography for studying the kinetics of slow luminescence components. Sources of quasi-rectangular pulses of micro-, milli- and second duration have been created based on VUV and DUV excilamps. Tests of the measuring system were carried out with the study of the kinetics of long-term luminescence of diamond, ruby, and leucosapphire irradiated with fast neutrons.</div></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":\"395 \",\"pages\":\"Article 117081\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2025-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424725008878\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725008878","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Measurements of the kinetics of slowly decaying luminescence excited by vacuum and deep ultraviolet radiation
Simple and inexpensive experimental methods and means for measuring the kinetics of long-term, including delayed, luminescence of various media excited by VUV and DUV radiation pulses have been developed. An analysis of physical and mathematical models of luminescent media in which two time components of significantly different durations with the same quantum yield are simultaneously excited has been performed. It has been shown that when using nano- or picosecond excitation pulses, the intensity of fast components exceeds the intensity of slow components by 4–5 decimal orders. Due to nonlinear distortions of signals in photodetector paths, this complicates the use of simple methods of direct oscillography for studying the kinetics of slow luminescence components. Sources of quasi-rectangular pulses of micro-, milli- and second duration have been created based on VUV and DUV excilamps. Tests of the measuring system were carried out with the study of the kinetics of long-term luminescence of diamond, ruby, and leucosapphire irradiated with fast neutrons.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...