Tb³⁺活化Ca₃La₃(BO₃)₅与碱离子共掺杂的磷光体用于高温光子应用的judd - felt分析和负热猝灭行为

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M.B. Coban , U.H. Kaynar , Abeer S. Altowyan , Jabir Hakami , H. Aydin , A. Canimoglu , N. Can
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引用次数: 0

摘要

这项工作系统地研究了Tb³ ⁺掺杂Ca₃La₃(BO₃)₅(CLBO)荧光粉通过溶胶-凝胶法合成并与碱离子共掺杂(Li⁺,Na⁺,K⁺)的结构、光学和热性能。XRD证实掺杂剂成功掺入无二次相的菱形CLBO晶格中。FTIR和拉曼光谱验证了硼酸盐网络的稳定性,并揭示了共掺杂导致的局部晶格畸变。可变激发下的光致发光(PL)分析显示出强烈的绿色发射(543 nm), 3 wt% Tb³ ⁺产生最佳输出。值得注意的是,碱共掺杂增强了强度和衰变寿命,CLBO:3 wt% Tb³ 、1 wt% Na⁺实现了创纪录的1.786 ms寿命。最值得注意的是,在高达550 K的温度下观察到扩展的负热猝灭效应,超过了Tb³ ⁺荧光粉以前的热稳定性极限。此外,在377 nm的激发下,选择性地观察到光谱上明显的672 nm红色发射,这表明了依赖于激发的种群机制。对5 - D₄→⁷FJ跃迁的judd - felt分析得出Ω₂、Ω₄和Ω₆参数,以及辐射速率和光学增益,支持局部对称在提高发射效率方面的作用。理论寿命(τrad = 0.071 ms)和实验寿命(0.980 ms)非常接近,证实了模型的准确性。CIE色度分析显示,碱共掺杂后的颜色输出可调,表明CLBO:Tb³ ⁺材料在热稳定光子应用中具有很强的潜力,包括led、显示器和发光测温。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Judd–Ofelt analysis and negative thermal quenching behavior of Tb³⁺-activated Ca₃La₃(BO₃)₅ phosphors co-doped with alkali ions for high-temperature photonic applications
This work presents a systematic investigation of the structural, optical, and thermal properties of Tb³ ⁺-doped Ca₃La₃(BO₃)₅ (CLBO) phosphors synthesized via sol-gel method and co-doped with alkali ions (Li⁺, Na⁺, K⁺). XRD confirmed successful dopant incorporation into the rhombohedral CLBO lattice without secondary phases. FTIR and Raman spectroscopy validated borate network stability and revealed local lattice distortion due to co-doping. Photoluminescence (PL) analysis under variable excitation demonstrated intense green emission (543 nm), with 3 wt% Tb³ ⁺ yielding optimum output. Remarkably, alkali co-doping enhanced both intensity and decay lifetime, with CLBO:3 wt% Tb³ ⁺, 1 wt% Na⁺ achieving a record 1.786 ms lifetime. Most notably, an extended negative thermal quenching effect was observed up to 550 K, exceeding previous thermal stability limits for Tb³ ⁺ phosphors. Additionally, a spectrally distinct 672 nm red emission was selectively observed under 377 nm excitation, suggesting excitation-dependent population mechanisms. Judd–Ofelt analysis of ⁵D₄ → ⁷FJ transitions yielded Ω₂, Ω₄, and Ω₆ parameters, along with radiative rates and optical gain, supporting the role of local symmetry in enhancing emission efficiency. Close agreement between theoretical (τrad = 0.071 ms) and experimental (0.980 ms) lifetimes confirmed model accuracy. CIE chromaticity analysis showed tunable color output via alkali co-doping, indicating strong potential for CLBO:Tb³ ⁺ materials in thermally stable photonic applications, including LEDs, displays, and luminescent thermometry.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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