Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba
{"title":"轨道互耦对氮化镓三水平桥腿影响的系统研究","authors":"Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba","doi":"10.1016/j.pedc.2025.100120","DOIUrl":null,"url":null,"abstract":"<div><div>An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100120"},"PeriodicalIF":0.0000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg\",\"authors\":\"Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba\",\"doi\":\"10.1016/j.pedc.2025.100120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.</div></div>\",\"PeriodicalId\":74483,\"journal\":{\"name\":\"Power electronic devices and components\",\"volume\":\"12 \",\"pages\":\"Article 100120\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Power electronic devices and components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2772370425000458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Power electronic devices and components","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772370425000458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg
An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.
Power electronic devices and componentsHardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality