在Ga₂O₃/ZnO纳米棒异质结中收集压电能量的自供电DUV光电探测器

IF 7.1 Q1 ENGINEERING, CHEMICAL

Chemical Engineering Journal Advances Pub Date : 2025-09-26 DOI:10.1016/j.ceja.2025.100889

Kai-Lin Yang , Liang-Wen Ji , Hung-Yeu Chen , Yu-Jen Hsiao , Siang-Ning Tseng , Zih-Han Lin

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引用次数: 0

摘要

本研究展示了基于Ga2O3/ZnO异质结构压电纳米发电机（PENGs）的自供电深紫外（DUV）光电探测器（PD）的制造，并通过受控热退火进行了优化。采用水热生长法制备ZnO纳米棒，采用射频磁控溅射法制备Ga2O3薄膜，然后在400-600℃退火以调节界面性能。XRD和PL光谱显示，在600°C时结晶度最佳，ZnO取向占主导地位（002），NBE发射比最低（缺陷比≈0.01）。254 nm DUV光照下的电特性表明，与制备样品相比，600℃退火器件的输出电压提高了60%，输出电流提高了62%。优化后的异质结构在254 nm紫外波段的峰值电压响应率为920 V·cm2/W，光/暗抑制比为103。这些结果验证了Ga2O3/ZnO异质结工程和热退火在实现用于UVC监测应用的高灵敏度、自供电DUV光探测方面的协同效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Self-powered DUV photodetector harvesting piezoelectric energy in a Ga₂O₃/ZnO nanorod heterojunction

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Self-powered DUV photodetector harvesting piezoelectric energy in a Ga₂O₃/ZnO nanorod heterojunction

This study demonstrates the fabrication of a self-powered deep-ultraviolet (DUV) photodetector (PD) based on Ga₂O₃/ZnO heterostructured piezoelectric nanogenerators (PENGs), optimized through controlled thermal annealing. ZnO nanorods were synthesized via hydrothermal growth, while Ga₂O₃ thin films were deposited by RF magnetron sputtering, followed by annealing at 400–600 °C to modulate interfacial properties. XRD and PL spectra highlighted optimal crystallinity at 600 °C, with a dominant (002) ZnO orientation and the lowest defect to near-band-edge (NBE) emission ratio (defect ratio ≈ 0.01). Electrical characterization under 254 nm DUV illumination showed a 60 % enhancement in output voltage and 62 % in output current for 600 °C-annealed devices compared to as-prepared samples. The optimized heterostructure achieved a peak voltage responsivity of 920 V·cm²/W at 254 nm ultraviolet C (UVC) band with a photo/dark rejection ratio of 10³. These results validate the synergistic effect of Ga₂O₃/ZnO heterojunction engineering and thermal annealing in enabling high-sensitivity, self-powered DUV photodetection for UVC monitoring applications.

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