二维半导体缺陷的磁邻近耦合

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2025-10-04 DOI:10.1021/acsnano.5c09258
Muhammad Hassan Shaikh, , , Matthew P. Whalen, , , Dai Q. Ho, , , Aqiq Ishraq, , , Collin Maurtua, , , Kenji Watanabe, , , Takashi Taniguchi, , , Yafei Ren, , , Anderson Janotti, , , John Q. Xiao, , and , Chitraleema Chakraborty*, 
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引用次数: 0

摘要

二维(2D)反铁磁(AFM)材料的超薄结构和高效自旋动力学为超快存储设备、人工智能电路和先进计算技术提供了很好的机会。例如,硫代磷酸铬(CrPS4)是最有前途的2D a型AFM材料之一,因为它在各种环境条件下具有强大的稳定性,并且由于晶体轴的各向异性(a和b),每层的净面外磁矩都具有很强的稳定性。然而,它们的净零磁矩对检测用于编码信息的nsamel状态提出了挑战。在本研究中,我们演示了利用二硒化钨(WSe2)的局部缺陷检测表层磁序来检测nsamel矢量。这些缺陷由于其窄线宽和对磁场(b场)的高敏感性而成为光主动换能器探测磁阶的理想候选者。我们在块体CrPS4和单层WSe2的异质结构中观察到自旋极化电荷转移,表明密度泛函理论(DFT)计算支持ii型能带对准。在a型原子力显微镜下,样品发出的右手和左手圆偏振光的强度作为施加b场的函数保持恒定,表明偏振跃迁行为恒定。我们的研究结果展示了一种通过使用局域和非局域缺陷激子作为探针来光学表征二维体AFM材料磁态的方法,为未来的研究和技术应用指明了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Magnetic Proximity Coupling to Defects in a Two-Dimensional Semiconductor

Magnetic Proximity Coupling to Defects in a Two-Dimensional Semiconductor

Magnetic Proximity Coupling to Defects in a Two-Dimensional Semiconductor

The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold promising opportunities for ultrafast memory devices, artificial intelligence circuits, and advanced computing technology. For example, chromium thiophosphate (CrPS4) is one of the most promising 2D A-type AFM materials due to its robust stability in diverse environmental conditions and net out-of-plane magnetic moment in each layer, attributed to anisotropy in crystal axes (a and b). However, their net-zero magnetic moment poses a challenge for detecting the Néel state that is used to encode information. In this study, we demonstrate the detection of the Néel vector by detecting the magnetic order of the surface layer by employing localized defects in tungsten diselenide (WSe2). These defects are ideal candidates for optically active transducers to probe the magnetic order due to their narrow line width and high susceptibility to magnetic field (B-fields). We observed spin-polarized charge transfer in the heterostructure of bulk CrPS4 and single-layer WSe2, indicating type-II band alignment as supported by density functional theory (DFT) calculations. In the A-type AFM regime, the intensity of both right-handed and left-handed circularly polarized light emanating from the sample remains constant as a function of the applied B-field, indicating a constant polarized transition behavior. Our results demonstrate an approach to optically characterizing the magnetic states of 2D bulk AFM material by using both localized and delocalized defect excitons as a probe, highlighting avenues for future research and technological applications.

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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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