Al0.25GaN0.75N/Al0.15Ga0.85N/GaN异质结构的高性能杂化阳极二极管

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Journal of Alloys and Compounds Pub Date : 2025-10-03 DOI:10.1016/j.jallcom.2025.184186

Runjie Zhou, Wenliang Wang

{"title":"Al0.25GaN0.75N/Al0.15Ga0.85N/GaN异质结构的高性能杂化阳极二极管","authors":"Runjie Zhou, Wenliang Wang","doi":"10.1016/j.jallcom.2025.184186","DOIUrl":null,"url":null,"abstract":"GaN hybrid anode diodes (HADs) have been extensively investigated for power applications. However, the problems of high turn-on voltage (VON) and high specific on-resistance (RON,sp) in GaN HADs caused by electron-electron scattering restrict further performance enhancements. In this work, high-performance Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs have been successfully fabricated. Unlike traditional single Al-component AlGaN/GaN heterostructures, the Al0.25Ga0.75N/Al0.15Ga0.85N/GaN heterostructures with layers progressively stacked according to step-graded Al components are proposed. The multilayer heterostructures generate multiple two-dimensional electron gas (2DEG) channels, effectively broadening the conductive paths and enhancing electron mobility by reducing electron-electron scattering. The as-prepared Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs present a low VON of 0.2 V and a low reverse current density of 2.52 nA/mm at an anode bias of −500 V. Moreover, the devices also exhibit a low RON,sp of 0.31 mΩ·cm2 with a high breakdown voltage (BV) of 868 V and a Baliga’s figure-of-merit (BFOM) of 2.41 GW/cm2. These results show the Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs are promising for next-generation power applications.","PeriodicalId":344,"journal":{"name":"Journal of Alloys and Compounds","volume":"121 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance hybrid anode diodes with Al0.25GaN0.75N/Al0.15Ga0.85N/GaN heterostructures\",\"authors\":\"Runjie Zhou, Wenliang Wang\",\"doi\":\"10.1016/j.jallcom.2025.184186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN hybrid anode diodes (HADs) have been extensively investigated for power applications. However, the problems of high turn-on voltage (VON) and high specific on-resistance (RON,sp) in GaN HADs caused by electron-electron scattering restrict further performance enhancements. In this work, high-performance Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs have been successfully fabricated. Unlike traditional single Al-component AlGaN/GaN heterostructures, the Al0.25Ga0.75N/Al0.15Ga0.85N/GaN heterostructures with layers progressively stacked according to step-graded Al components are proposed. The multilayer heterostructures generate multiple two-dimensional electron gas (2DEG) channels, effectively broadening the conductive paths and enhancing electron mobility by reducing electron-electron scattering. The as-prepared Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs present a low VON of 0.2 V and a low reverse current density of 2.52 nA/mm at an anode bias of −500 V. Moreover, the devices also exhibit a low RON,sp of 0.31 mΩ·cm2 with a high breakdown voltage (BV) of 868 V and a Baliga’s figure-of-merit (BFOM) of 2.41 GW/cm2. These results show the Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs are promising for next-generation power applications.\",\"PeriodicalId\":344,\"journal\":{\"name\":\"Journal of Alloys and Compounds\",\"volume\":\"121 1\",\"pages\":\"\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2025-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Alloys and Compounds\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.jallcom.2025.184186\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Alloys and Compounds","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jallcom.2025.184186","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

氮化镓杂化阳极二极管（HADs）在功率应用方面得到了广泛的研究。然而，电子-电子散射引起的GaN HADs的高导通电压（VON）和高比导通电阻（RON,sp）问题限制了性能的进一步提高。本文成功制备了高性能的Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs。与传统的单Al组分AlGaN/GaN异质结构不同，本文提出了Al0.25Ga0.75N/Al0.15Ga0.85N/GaN异质结构，该异质结构根据Al组分的阶跃渐变逐步堆叠。多层异质结构产生了多个二维电子气（2DEG）通道，有效地拓宽了导电路径，并通过减少电子-电子散射提高了电子迁移率。制备的Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs在负极偏置为- 500 V时具有0.2 V的低VON和2.52 nA/mm的低反向电流密度。此外，该器件还具有0.31 mΩ·cm2的低RON，sp， 868 V的高击穿电压（BV）和2.41 GW/cm2的Baliga品质系数（bom）。这些结果表明，Al0.25Ga0.75N/Al0.15Ga0.85N/GaN HADs在下一代电源应用中具有广阔的前景。

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High-performance hybrid anode diodes with Al0.25GaN0.75N/Al0.15Ga0.85N/GaN heterostructures

GaN hybrid anode diodes (HADs) have been extensively investigated for power applications. However, the problems of high turn-on voltage (V_ON) and high specific on-resistance (R_ON,sp) in GaN HADs caused by electron-electron scattering restrict further performance enhancements. In this work, high-performance Al_0.25Ga_0.75N/Al_0.15Ga_0.85N/GaN HADs have been successfully fabricated. Unlike traditional single Al-component AlGaN/GaN heterostructures, the Al_0.25Ga_0.75N/Al_0.15Ga_0.85N/GaN heterostructures with layers progressively stacked according to step-graded Al components are proposed. The multilayer heterostructures generate multiple two-dimensional electron gas (2DEG) channels, effectively broadening the conductive paths and enhancing electron mobility by reducing electron-electron scattering. The as-prepared Al_0.25Ga_0.75N/Al_0.15Ga_0.85N/GaN HADs present a low V_ON of 0.2 V and a low reverse current density of 2.52 nA/mm at an anode bias of −500 V. Moreover, the devices also exhibit a low R_ON,sp of 0.31 mΩ·cm² with a high breakdown voltage (BV) of 868 V and a Baliga’s figure-of-merit (BFOM) of 2.41 GW/cm². These results show the Al_0.25Ga_0.75N/Al_0.15Ga_0.85N/GaN HADs are promising for next-generation power applications.

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来源期刊

Journal of Alloys and Compounds 工程技术-材料科学：综合

CiteScore

11.10

自引率

14.50%

发文量

5146

审稿时长

67 days

期刊介绍： The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.