{"title":"适应PVA/CMC/x wt% ZnAl2O4/ZnO混合聚合物的线性/非线性光学和介电特性用于光电和电容储能","authors":"A. M. El-naggar, A. M. Kamal, A. A. Albassam","doi":"10.1007/s10854-025-15874-w","DOIUrl":null,"url":null,"abstract":"<div><p>In current work, blended polymer films have been prepared from ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite loaded polyvinyl alcohol (PVA)/carboxymethyl cellulose (CMC) blended polymer to exploit the uses of the formed materials in diverse optoelectronic and capacitive energy storage uses. The structure crystallite size and morphology of the filler sample were explored. The influence of filler amount on the crystallinity of the host PVA/CMC blended polymer was detected. The optical absorbance improvement or decline was contingent upon the wavelength range and/or the quantity of filler. The sample doped with 8 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite has the greatest absorbance in the visible region. The direct and indirect optical band gap energy values increased as the ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite concentration reached 2 wt% and they subsequently decreased as the amount of ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite in the polymer matrix grew. Doping the host blend with 8 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite only enhanced its refractive index (1.72). The <i>k</i> values of the loaded composite polymers were either greater than or less than that of the undoped sample, relying on the dopant level and/or the wavelength range. The influence of doping amount and the wavelength range on the linear/nonlinear optical parameters were examined. The dielectric constant (16 at 1 kHz) and AC conductivity attained their uppermost value at 2 wt% filler content, subsequently declining with more doping. The sample with 2 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite has a greater capacitive nature. The insertion of ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite filler into the PVA/CMC polymer affected the Nyquist plot.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Adapting of the linear/nonlinear optical and dielectric features of PVA/CMC/x wt% ZnAl2O4/ZnO blended polymers for optoelectronic and capacitive energy storage uses\",\"authors\":\"A. M. El-naggar, A. M. Kamal, A. A. Albassam\",\"doi\":\"10.1007/s10854-025-15874-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In current work, blended polymer films have been prepared from ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite loaded polyvinyl alcohol (PVA)/carboxymethyl cellulose (CMC) blended polymer to exploit the uses of the formed materials in diverse optoelectronic and capacitive energy storage uses. The structure crystallite size and morphology of the filler sample were explored. The influence of filler amount on the crystallinity of the host PVA/CMC blended polymer was detected. The optical absorbance improvement or decline was contingent upon the wavelength range and/or the quantity of filler. The sample doped with 8 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite has the greatest absorbance in the visible region. The direct and indirect optical band gap energy values increased as the ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite concentration reached 2 wt% and they subsequently decreased as the amount of ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite in the polymer matrix grew. Doping the host blend with 8 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite only enhanced its refractive index (1.72). The <i>k</i> values of the loaded composite polymers were either greater than or less than that of the undoped sample, relying on the dopant level and/or the wavelength range. The influence of doping amount and the wavelength range on the linear/nonlinear optical parameters were examined. The dielectric constant (16 at 1 kHz) and AC conductivity attained their uppermost value at 2 wt% filler content, subsequently declining with more doping. The sample with 2 wt% ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite has a greater capacitive nature. The insertion of ZnAl<sub>2</sub>O<sub>4</sub>/ZnO nanocomposite filler into the PVA/CMC polymer affected the Nyquist plot.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15874-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15874-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Adapting of the linear/nonlinear optical and dielectric features of PVA/CMC/x wt% ZnAl2O4/ZnO blended polymers for optoelectronic and capacitive energy storage uses
In current work, blended polymer films have been prepared from ZnAl2O4/ZnO nanocomposite loaded polyvinyl alcohol (PVA)/carboxymethyl cellulose (CMC) blended polymer to exploit the uses of the formed materials in diverse optoelectronic and capacitive energy storage uses. The structure crystallite size and morphology of the filler sample were explored. The influence of filler amount on the crystallinity of the host PVA/CMC blended polymer was detected. The optical absorbance improvement or decline was contingent upon the wavelength range and/or the quantity of filler. The sample doped with 8 wt% ZnAl2O4/ZnO nanocomposite has the greatest absorbance in the visible region. The direct and indirect optical band gap energy values increased as the ZnAl2O4/ZnO nanocomposite concentration reached 2 wt% and they subsequently decreased as the amount of ZnAl2O4/ZnO nanocomposite in the polymer matrix grew. Doping the host blend with 8 wt% ZnAl2O4/ZnO nanocomposite only enhanced its refractive index (1.72). The k values of the loaded composite polymers were either greater than or less than that of the undoped sample, relying on the dopant level and/or the wavelength range. The influence of doping amount and the wavelength range on the linear/nonlinear optical parameters were examined. The dielectric constant (16 at 1 kHz) and AC conductivity attained their uppermost value at 2 wt% filler content, subsequently declining with more doping. The sample with 2 wt% ZnAl2O4/ZnO nanocomposite has a greater capacitive nature. The insertion of ZnAl2O4/ZnO nanocomposite filler into the PVA/CMC polymer affected the Nyquist plot.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.