Time-domain response improvement and bandwidth expansion of graphene nanoribbon interconnects using two types of high-k dielectric materials

With the continued scaling of integrated circuit (IC) technology nodes, optimizing interconnect performance has become critical for improving overall system performance. To overcome the limitations of single high-k dielectric insertions, we introduce a dual-dielectric approach using two distinct high-k materials within multilayer graphene nanoribbon (MLGNR) interconnects. This strategy improves carrier mobility and suppresses interfacial scattering, thereby enhancing interconnect signal transmission. The paper develops a comprehensive model that incorporates equivalent resistance, capacitance, and inductance. Based on the model, this paper applies the ABCD parameter matrix method to derive the interconnect transfer function and clarify how the dual-dielectric configuration enhances signal propagation, expands bandwidth, and reduces delay. Theoretical derivations are used to evaluate the proposed structure’s impact on key performance indicators, including mean free path (MFP), scattering resistance, delay, gain, 3 dB bandwidth, and energy-delay product (EDP). The results demonstrate that, compared to single-dielectric designs, the dual-dielectric strategy generally improves performance by reducing settling time and expanding the 3 dB bandwidth, leading to significant overall enhancements in signal transmission and efficiency. This paper provides theoretical support and data evidence for multi-dielectric design strategies in nanoscale MLGNR interconnect structures.