{"title":"采用InGaSb口袋调制提高非均匀通道双栅隧道场效应晶体管的性能和可靠性","authors":"Rajeev Kumar Sachan, Vedvrat, Shrish Bajpai","doi":"10.1134/S1063783425602267","DOIUrl":null,"url":null,"abstract":"<p>This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 2.65 × 10<sup>13</sup>, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (<i>g</i><sub>m</sub>) of 4.98 mS, which aids in maintaining a stable threshold voltage (<i>V</i><sub>th</sub>) of 0.384 V. Furthermore, it delivers an ON-state current (<i>I</i><sub>on</sub>) of 1.10 mA/µm and an OFF-state leakage current (<i>I</i><sub>off</sub>) of 5.83 × 10<sup>−17</sup> A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 10","pages":"905 - 917"},"PeriodicalIF":1.8000,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation\",\"authors\":\"Rajeev Kumar Sachan, Vedvrat, Shrish Bajpai\",\"doi\":\"10.1134/S1063783425602267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 2.65 × 10<sup>13</sup>, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (<i>g</i><sub>m</sub>) of 4.98 mS, which aids in maintaining a stable threshold voltage (<i>V</i><sub>th</sub>) of 0.384 V. Furthermore, it delivers an ON-state current (<i>I</i><sub>on</sub>) of 1.10 mA/µm and an OFF-state leakage current (<i>I</i><sub>off</sub>) of 5.83 × 10<sup>−17</sup> A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.</p>\",\"PeriodicalId\":731,\"journal\":{\"name\":\"Physics of the Solid State\",\"volume\":\"67 10\",\"pages\":\"905 - 917\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2025-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics of the Solid State\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063783425602267\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783425602267","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation
This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high Ion/Ioff ratio of 2.65 × 1013, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (gm) of 4.98 mS, which aids in maintaining a stable threshold voltage (Vth) of 0.384 V. Furthermore, it delivers an ON-state current (Ion) of 1.10 mA/µm and an OFF-state leakage current (Ioff) of 5.83 × 10−17 A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.
期刊介绍：
Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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