基于量子阱内泵浦GaInP/AlGaInP异质结构的半导体圆盘激光器

IF 1.3 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-10-02 DOI:10.1134/S0021364025607717

A. A. Elsherbini, V. I. Kozlovsky, Ya. K. Skasyrsky, M. P. Frolov

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引用次数: 0

摘要

首次研究了基于GaInP/AlGaInP异质结构，利用614.5 nm染料激光向25个量子阱内泵浦的642.5 nm脉冲半导体盘激光器。在脉冲持续时间约0.5 μs的情况下，脉冲功率可达~ 80w。这种力量受到结构破坏的限制。检测到具有异质结构的染料激光器在腔内辐射的时间调制，其周期为~ 6ns，等于腔的往返时间。

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Semiconductor Disk Laser Based on a GaInP/AlGaInP Heterostructure with Intracavity Pumping into Quantum Wells

A pulsed semiconductor disk laser emitting at a wavelength of 642.5 nm based on a GaInP/AlGaInP heterostructure with intracavity pumping into 25 quantum wells by 614.5-nm radiation from a dye laser has been studied for the first time. A pulsed power of ~80 W has been achieved at a pulse duration of ~0.5 μs. The power is limited by the destruction of the structure. The time modulation of radiation of the dye laser with a heterostructure inside the cavity with a period of ~6 ns equal to the cavity round-trip time has been detected.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.