Le Ju, Binqian Zou, Suofu Wang, Tao Han, Feng Li, Xinyuan Hou, Min Zhang, Fei Ding, Lei Shan, Mingsheng Long
{"title":"基于b-AsP/In2Se3异质结构的偏振敏感光电探测器","authors":"Le Ju, Binqian Zou, Suofu Wang, Tao Han, Feng Li, Xinyuan Hou, Min Zhang, Fei Ding, Lei Shan, Mingsheng Long","doi":"10.1039/d5nr02575c","DOIUrl":null,"url":null,"abstract":"Van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The excellent performance of the device, including a high photoresponsivity (R) of 4129.3 AW-1, competitive high specific detectivity (D*) of 2.8×1011 cmHz1/2W-1, and very low noise equivalent power (NEP) of 2.8×10-15 WHz−1/2 with 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, decay time (τd) of 2.8 μs, and a high dichroic ratio of ~2.12 with a 637 nm laser. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":"114 1","pages":""},"PeriodicalIF":5.1000,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polarization-Sensitive Photodetector Based on b-AsP/In2Se3 Heterostructure\",\"authors\":\"Le Ju, Binqian Zou, Suofu Wang, Tao Han, Feng Li, Xinyuan Hou, Min Zhang, Fei Ding, Lei Shan, Mingsheng Long\",\"doi\":\"10.1039/d5nr02575c\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The excellent performance of the device, including a high photoresponsivity (R) of 4129.3 AW-1, competitive high specific detectivity (D*) of 2.8×1011 cmHz1/2W-1, and very low noise equivalent power (NEP) of 2.8×10-15 WHz−1/2 with 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, decay time (τd) of 2.8 μs, and a high dichroic ratio of ~2.12 with a 637 nm laser. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.\",\"PeriodicalId\":92,\"journal\":{\"name\":\"Nanoscale\",\"volume\":\"114 1\",\"pages\":\"\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1039/d5nr02575c\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d5nr02575c","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Polarization-Sensitive Photodetector Based on b-AsP/In2Se3 Heterostructure
Van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The excellent performance of the device, including a high photoresponsivity (R) of 4129.3 AW-1, competitive high specific detectivity (D*) of 2.8×1011 cmHz1/2W-1, and very low noise equivalent power (NEP) of 2.8×10-15 WHz−1/2 with 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, decay time (τd) of 2.8 μs, and a high dichroic ratio of ~2.12 with a 637 nm laser. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.