DPIM：一种具有稀疏感知量化和异构密集-稀疏核的2T1C eDRAM内存变压器芯片

IF 5.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Solid-state Circuits Pub Date : 2025-10-01 DOI:10.1109/jssc.2025.3607826

Donghyuk Kim, Jae-Young Kim, Hyunjun Cho, Seungjae Yoo, Sukjin Lee, Sungwoong Yune, Sejeong Yang, Hoichang Jeong, Keonhee Park, Ki-Soo Lee, Jongchan Lee, Chanheum Han, Gunmo Koo, Yuli Han, Jaejin Kim, Jaemin Kim, Kyuho Jason Lee, Joo-Hyung Chae, Kunhee Cho, Joo-Young Kim

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.