High-Performance Spin Field-Effect Transistors with Multicycle Spin Precession in BLG/WSe2/hBN Heterostructures

Spintronics seeks to enhance information processing by harnessing the spin of electrons, offering solutions to the limitations of conventional electronics. A key device in spintronics research is the spin-injected field-effect transistor (spin FET), which incorporates a lateral semiconducting channel and ferromagnetic electrodes. This study presents a high-mobility BLG/WSe₂/hBN spin FET capable of operating from cryogenic to room temperature, demonstrating efficient spin injection, detection, and precession. We investigate spin transport across different transport regimes, revealing coherent spin precession in the ballistic regime and a transition to reduced coherence in the semiballistic and diffusive regimes. By modulating the gate voltage, we achieve precise control over Rashba spin–orbit coupling, which enables tunable spin dynamics in the device. These findings advance the understanding of spin transport in 2D heterostructures and pave the way for developing electrically controlled spintronic devices for future applications in logic, memory, and quantum technologies.