{"title":"B-N共价键熔接萘衍生物的工程窄带黄色发光和节能白色oled。","authors":"Renze He,Qi Wang,Shuai Xiao,Wanting Ju,Han Si,Xiangqin Gan,Xian Chen,Guoyun Meng,Dongdong Zhang,Lian Duan,Junqiao Ding","doi":"10.1002/adma.202513180","DOIUrl":null,"url":null,"abstract":"The doping of B‒N covalent bond into multiple resonance (MR) emitters is believed to enable easy synthesis while maintaining the intrinsic narrow spectral profile for high-definition organic light-emitting diodes (OLEDs). However, there is still an unexplored spot if the residual MR section is further removed. Herein, the molecular engineering of B‒N covalent bond-fused naphthalene derivatives is demonstrated that are free of MR for yellow emission with a reduced spectral bandwidth and power-efficient white OLEDs. Starting from the BN-nap1 reference, a dual fusion strategy is proposed to design two new yellow emitters, BN-nap2 and BN-nap3, by integrating B‒N bonds with naphthalene via a centro and axial symmetry, respectively. Both of them exhibit significantly red-shifted light to the yellow region, decreased full width at half maximum, improved photoluminescent quantum yield, due to the B-naphthalene-B conjugation and suppressed high-frequency vibrations. As a result, the corresponding warm white devices achieve a record-high power efficiency of 101.4 lm W-1 at 1000 cd m-2 and Commission Internationale de l'Éclairage (CIE) coordinates of (0.342, 0.542). Further device optimization leads to a standard white electroluminescence with CIE coordinates of (0.334, 0.342). The unprecedented performance indicates the great potential of B‒N covalent bond-fused naphthalene derivatives in power-efficient white OLEDs.","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"5 1","pages":"e13180"},"PeriodicalIF":26.8000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineering B‒N Covalent Bond-Fused Naphthalene Derivatives for Narrowband Yellow Emission and Power-Efficient White OLEDs.\",\"authors\":\"Renze He,Qi Wang,Shuai Xiao,Wanting Ju,Han Si,Xiangqin Gan,Xian Chen,Guoyun Meng,Dongdong Zhang,Lian Duan,Junqiao Ding\",\"doi\":\"10.1002/adma.202513180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The doping of B‒N covalent bond into multiple resonance (MR) emitters is believed to enable easy synthesis while maintaining the intrinsic narrow spectral profile for high-definition organic light-emitting diodes (OLEDs). However, there is still an unexplored spot if the residual MR section is further removed. Herein, the molecular engineering of B‒N covalent bond-fused naphthalene derivatives is demonstrated that are free of MR for yellow emission with a reduced spectral bandwidth and power-efficient white OLEDs. Starting from the BN-nap1 reference, a dual fusion strategy is proposed to design two new yellow emitters, BN-nap2 and BN-nap3, by integrating B‒N bonds with naphthalene via a centro and axial symmetry, respectively. Both of them exhibit significantly red-shifted light to the yellow region, decreased full width at half maximum, improved photoluminescent quantum yield, due to the B-naphthalene-B conjugation and suppressed high-frequency vibrations. As a result, the corresponding warm white devices achieve a record-high power efficiency of 101.4 lm W-1 at 1000 cd m-2 and Commission Internationale de l'Éclairage (CIE) coordinates of (0.342, 0.542). Further device optimization leads to a standard white electroluminescence with CIE coordinates of (0.334, 0.342). The unprecedented performance indicates the great potential of B‒N covalent bond-fused naphthalene derivatives in power-efficient white OLEDs.\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":\"5 1\",\"pages\":\"e13180\"},\"PeriodicalIF\":26.8000,\"publicationDate\":\"2025-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/adma.202513180\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adma.202513180","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
在多共振(MR)发射体中掺杂B-N共价键被认为可以在保持高清晰度有机发光二极管(oled)固有窄光谱分布的同时,使合成变得容易。然而,如果进一步去除残余MR切片,仍有一个未勘探的点。本文证明了B-N共价键熔接萘衍生物的分子工程,该衍生物对黄色发射无MR,具有降低的光谱带宽和节能的白色oled。从BN-nap1的参考文献出发,提出了一种双聚变策略,通过B-N键与萘的中心对称和轴对称,分别设计了BN-nap2和BN-nap3两个新的黄色发射体。由于b -萘- b的共轭作用和抑制了高频振动,两种材料都表现出明显的光红移到黄色区域,最大半宽处全宽减小,光致发光量子产率提高。因此,相应的暖白色器件在1000 cd m-2下实现了101.4 lm W-1的创纪录的高功率效率,国际委员会Éclairage (CIE)坐标为(0.342,0.542)。进一步的器件优化可以得到CIE坐标为(0.334,0.342)的标准白色电致发光。这一前所未有的性能表明了B-N共价键熔接萘衍生物在节能白色oled中的巨大潜力。
Engineering B‒N Covalent Bond-Fused Naphthalene Derivatives for Narrowband Yellow Emission and Power-Efficient White OLEDs.
The doping of B‒N covalent bond into multiple resonance (MR) emitters is believed to enable easy synthesis while maintaining the intrinsic narrow spectral profile for high-definition organic light-emitting diodes (OLEDs). However, there is still an unexplored spot if the residual MR section is further removed. Herein, the molecular engineering of B‒N covalent bond-fused naphthalene derivatives is demonstrated that are free of MR for yellow emission with a reduced spectral bandwidth and power-efficient white OLEDs. Starting from the BN-nap1 reference, a dual fusion strategy is proposed to design two new yellow emitters, BN-nap2 and BN-nap3, by integrating B‒N bonds with naphthalene via a centro and axial symmetry, respectively. Both of them exhibit significantly red-shifted light to the yellow region, decreased full width at half maximum, improved photoluminescent quantum yield, due to the B-naphthalene-B conjugation and suppressed high-frequency vibrations. As a result, the corresponding warm white devices achieve a record-high power efficiency of 101.4 lm W-1 at 1000 cd m-2 and Commission Internationale de l'Éclairage (CIE) coordinates of (0.342, 0.542). Further device optimization leads to a standard white electroluminescence with CIE coordinates of (0.334, 0.342). The unprecedented performance indicates the great potential of B‒N covalent bond-fused naphthalene derivatives in power-efficient white OLEDs.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.