用于可重构电子器件的二维半导体极性控制。

IF 9.9 1区 工程技术 Q1 INSTRUMENTS & INSTRUMENTATION
Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai, Zhanxia Zhao, Xiaowei Wang, Ting Zhang
{"title":"用于可重构电子器件的二维半导体极性控制。","authors":"Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai, Zhanxia Zhao, Xiaowei Wang, Ting Zhang","doi":"10.1038/s41378-025-01029-8","DOIUrl":null,"url":null,"abstract":"<p><p>The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO<sub>x</sub>/WSe<sub>2</sub>/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO<sub>x</sub>/WSe<sub>2</sub> interface. With this method, an electrically configurable complementary inverter is created with a single WSe<sub>2</sub> flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.</p>","PeriodicalId":18560,"journal":{"name":"Microsystems & Nanoengineering","volume":"11 1","pages":"178"},"PeriodicalIF":9.9000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480568/pdf/","citationCount":"0","resultStr":"{\"title\":\"Polarity control of 2D semiconductor for reconfigurable electronics.\",\"authors\":\"Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai, Zhanxia Zhao, Xiaowei Wang, Ting Zhang\",\"doi\":\"10.1038/s41378-025-01029-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO<sub>x</sub>/WSe<sub>2</sub>/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO<sub>x</sub>/WSe<sub>2</sub> interface. With this method, an electrically configurable complementary inverter is created with a single WSe<sub>2</sub> flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.</p>\",\"PeriodicalId\":18560,\"journal\":{\"name\":\"Microsystems & Nanoengineering\",\"volume\":\"11 1\",\"pages\":\"178\"},\"PeriodicalIF\":9.9000,\"publicationDate\":\"2025-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480568/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microsystems & Nanoengineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1038/s41378-025-01029-8\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microsystems & Nanoengineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41378-025-01029-8","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0

摘要

半导体载流子极性的可控调制对于实现可重构器件的动态配置至关重要。双极性二维(2D)半导体以其原子级厚度和优异的栅极调制效率为特征,已成为此类器件极具前景的沟道材料。然而,现有的极性控制方法在器件运行期间实现可逆调制方面遇到了挑战。在这里,我们报告了一种通过门控电荷捕获可逆调制双极性二维半导体极性的新策略。我们展示了一种双栅极TaOx/WSe2/h-BN场效应晶体管,它可以在TaOx/WSe2界面上通过电场驱动的双极电荷捕获在n型和p型输运特性之间可逆切换。通过这种方法,可以用单个WSe2片创建一个可电气配置的互补逆变器,功耗仅为0.7 nW。此外,可编程p-n/n-p二极管实现了bbb10万倍的整流比变化。这些结果证明了门控双极电荷捕获在推进可重构电子学方面的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polarity control of 2D semiconductor for reconfigurable electronics.

The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaOx/WSe2/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaOx/WSe2 interface. With this method, an electrically configurable complementary inverter is created with a single WSe2 flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.

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来源期刊
Microsystems & Nanoengineering
Microsystems & Nanoengineering Materials Science-Materials Science (miscellaneous)
CiteScore
12.00
自引率
3.80%
发文量
123
审稿时长
20 weeks
期刊介绍: Microsystems & Nanoengineering is a comprehensive online journal that focuses on the field of Micro and Nano Electro Mechanical Systems (MEMS and NEMS). It provides a platform for researchers to share their original research findings and review articles in this area. The journal covers a wide range of topics, from fundamental research to practical applications. Published by Springer Nature, in collaboration with the Aerospace Information Research Institute, Chinese Academy of Sciences, and with the support of the State Key Laboratory of Transducer Technology, it is an esteemed publication in the field. As an open access journal, it offers free access to its content, allowing readers from around the world to benefit from the latest developments in MEMS and NEMS.
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