{"title":"用于可重构电子器件的二维半导体极性控制。","authors":"Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai, Zhanxia Zhao, Xiaowei Wang, Ting Zhang","doi":"10.1038/s41378-025-01029-8","DOIUrl":null,"url":null,"abstract":"<p><p>The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO<sub>x</sub>/WSe<sub>2</sub>/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO<sub>x</sub>/WSe<sub>2</sub> interface. With this method, an electrically configurable complementary inverter is created with a single WSe<sub>2</sub> flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.</p>","PeriodicalId":18560,"journal":{"name":"Microsystems & Nanoengineering","volume":"11 1","pages":"178"},"PeriodicalIF":9.9000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480568/pdf/","citationCount":"0","resultStr":"{\"title\":\"Polarity control of 2D semiconductor for reconfigurable electronics.\",\"authors\":\"Xiaoqian He, Kejie Guan, Fuqin Sun, Xiaoshuang Gou, Lin Liu, Yingyi Wang, Weifan Zhou, Yang Xia, Cheng Zhang, Hao Dai, Zhanxia Zhao, Xiaowei Wang, Ting Zhang\",\"doi\":\"10.1038/s41378-025-01029-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaO<sub>x</sub>/WSe<sub>2</sub>/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO<sub>x</sub>/WSe<sub>2</sub> interface. With this method, an electrically configurable complementary inverter is created with a single WSe<sub>2</sub> flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.</p>\",\"PeriodicalId\":18560,\"journal\":{\"name\":\"Microsystems & Nanoengineering\",\"volume\":\"11 1\",\"pages\":\"178\"},\"PeriodicalIF\":9.9000,\"publicationDate\":\"2025-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12480568/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microsystems & Nanoengineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1038/s41378-025-01029-8\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microsystems & Nanoengineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41378-025-01029-8","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Polarity control of 2D semiconductor for reconfigurable electronics.
The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices. Ambipolar two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and excellent gate modulation efficiency, have emerged as highly promising channel materials for such devices. However, existing methods for polarity control encounter challenges in achieving reversible modulation during device operation. Here, we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping. We demonstrate a double-gate TaOx/WSe2/h-BN field-effect transistor, which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaOx/WSe2 interface. With this method, an electrically configurable complementary inverter is created with a single WSe2 flake, exhibiting a power consumption of just 0.7 nW. Additionally, a programmable p-n/n-p diode is realized with a > 100,000-fold change in the rectification ratio. These results demonstrate the great potential of gate-controlled bipolar charge trapping for advancing reconfigurable electronics.
期刊介绍:
Microsystems & Nanoengineering is a comprehensive online journal that focuses on the field of Micro and Nano Electro Mechanical Systems (MEMS and NEMS). It provides a platform for researchers to share their original research findings and review articles in this area. The journal covers a wide range of topics, from fundamental research to practical applications. Published by Springer Nature, in collaboration with the Aerospace Information Research Institute, Chinese Academy of Sciences, and with the support of the State Key Laboratory of Transducer Technology, it is an esteemed publication in the field. As an open access journal, it offers free access to its content, allowing readers from around the world to benefit from the latest developments in MEMS and NEMS.