A New Precise Analytical Modeling for Triangular Gate FinFETs With Quantum Effects

In this study, we present a comprehensive analytical model for triangular gate (TG) fin-shaped field-effect transistors (FinFETs) that fully incorporate quantum effects. Our model extends the traditional analytical solution to the Schrödinger-Poisson equation using a variational technique. Specifically, we derive an analytical expression for the inversion charge distribution function (ICDF), often referred to as the wave function, specifically tailored for TG FinFETs. Utilizing this ICDF, we calculate key device parameters such as the inversion charge centroid, subthreshold swing (SS), drain-induced barrier lowering (DIBL), threshold voltage, inversion charge, and drain current. Our methodology is versatile, accommodating various device geometries and operational biases. To validate our model, we performed a comparative analysis with results from TCAD simulations, demonstrating strong agreement and substantiating the accuracy of our approach.