Cong Han, Haiming Qin, Weijing Shao, Hanbing Fang, Hao Zhang, Xinpeng Wang, Yu Wang, Yi Liu, Yi Tong
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Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO2 by Interface Engineering.
Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al2O3 layer atop Zr-doped HfO2. The TiN/Al2O3/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device's conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams.
期刊介绍：
Materials (ISSN 1996-1944) is an open access journal of related scientific research and technology development. It publishes reviews, regular research papers (articles) and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. Therefore, there is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced. Materials provides a forum for publishing papers which advance the in-depth understanding of the relationship between the structure, the properties or the functions of all kinds of materials. Chemical syntheses, chemical structures and mechanical, chemical, electronic, magnetic and optical properties and various applications will be considered.
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