InGaAs/GaAs量子阱点的透明电流和增益谱

IF 1 4区 化学 Q4 SPECTROSCOPY
G. O. Kornyshov, A. S. Payusov, A. A. Kharchenko, A. A. Beckman, Yu. M. Shernyakov, S. A. Mintairov, N. A. Kalyuzhny, M. V. Maksimov, N. Yu. Gordeev
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引用次数: 0

摘要

得到了InGaAs/GaAs量子阱点透明电流与光子能量的实验依赖关系,光子能量对应于电子和空穴的准费米能级之差。结果表明,利用得到的依赖关系和已知的自发发光和光吸收之间的关系,可以从自发发光光谱中计算出模态增益光谱。计算了不同泵浦电流下InGaAs/GaAs量子阱点的模态增益谱。该技术可用于研究在超发光状态下器件的增益光谱,当增益最大值的位置未知时。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transparency Current and Gain Spectrum of InGaAs/GaAs Quantum Well-Dots

The experimental dependence of the transparency current of InGaAs/GaAs quantum well-dots on the photon energy, which corresponds to the difference of quasi-Fermi levels for electrons and holes, has been obtained. It is shown that modal gain spectra can be calculated from spontaneous luminescence spectra using the obtained dependence and the known relationship between spontaneous luminescence and optical absorption. Modal gain spectra of InGaAs/GaAs quantum well-dots at different pump currents have been calculated. The technique can be used to study gain spectra of devices operating in superluminescence regimes, when the position of the gain maximum is unknown.

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来源期刊
CiteScore
1.30
自引率
14.30%
发文量
145
审稿时长
2.5 months
期刊介绍: Journal of Applied Spectroscopy reports on many key applications of spectroscopy in chemistry, physics, metallurgy, and biology. An increasing number of papers focus on the theory of lasers, as well as the tremendous potential for the practical applications of lasers in numerous fields and industries.
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