HR-GaAs:Cr电离辐射传感器的空穴光电流动力学

IF 0.4 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
M. S. Trofimov, I. D. Chsherbakov
{"title":"HR-GaAs:Cr电离辐射传感器的空穴光电流动力学","authors":"M. S. Trofimov,&nbsp;I. D. Chsherbakov","doi":"10.1007/s11182-025-03475-3","DOIUrl":null,"url":null,"abstract":"<div><p>The results of a study of hole transport in chromium-compensated gallium arsenide (HR-GaAs:Cr) sensors using a transient current technique and a numerical simulation of the photoresponse of an HR-GaAs:Cr sensor to a single pulse of infrared radiation are presented. The objects of research are the HR-GaAs:Cr sensors with a mesh metal contact to which a positive potential is applied. It is established that when the sensor is irradiated from the mesh anode, the electrons drift in the horizontal direction to the sensor strips, leading to the formation of a photocurrent pulse in the electrical circuit with a duration shorter than 1 ns. The observed areas of exponential decay of the photocurrent at the pulse trailing edges are attributed to the drift of holes towards the sensor cathode, accompanied by their capture by negatively charged chromium centers. Based on the results obtained, the lifetime of holes in the samples under study is determined.</p></div>","PeriodicalId":770,"journal":{"name":"Russian Physics Journal","volume":"68 4","pages":"632 - 638"},"PeriodicalIF":0.4000,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hole photocurrent dynamics in HR-GaAs:Cr ionizing radiation sensors\",\"authors\":\"M. S. Trofimov,&nbsp;I. D. Chsherbakov\",\"doi\":\"10.1007/s11182-025-03475-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The results of a study of hole transport in chromium-compensated gallium arsenide (HR-GaAs:Cr) sensors using a transient current technique and a numerical simulation of the photoresponse of an HR-GaAs:Cr sensor to a single pulse of infrared radiation are presented. The objects of research are the HR-GaAs:Cr sensors with a mesh metal contact to which a positive potential is applied. It is established that when the sensor is irradiated from the mesh anode, the electrons drift in the horizontal direction to the sensor strips, leading to the formation of a photocurrent pulse in the electrical circuit with a duration shorter than 1 ns. The observed areas of exponential decay of the photocurrent at the pulse trailing edges are attributed to the drift of holes towards the sensor cathode, accompanied by their capture by negatively charged chromium centers. Based on the results obtained, the lifetime of holes in the samples under study is determined.</p></div>\",\"PeriodicalId\":770,\"journal\":{\"name\":\"Russian Physics Journal\",\"volume\":\"68 4\",\"pages\":\"632 - 638\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2025-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Russian Physics Journal\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11182-025-03475-3\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Physics Journal","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11182-025-03475-3","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文利用瞬态电流技术研究了铬补偿砷化镓(HR-GaAs:Cr)传感器中的空穴输运,并对HR-GaAs:Cr传感器对单脉冲红外辐射的光响应进行了数值模拟。研究的对象是具有网状金属接触并施加正电位的HR-GaAs:Cr传感器。结果表明,当传感器从网状阳极照射时,电子沿水平方向向传感器条漂移,导致电路中形成持续时间小于1 ns的光电流脉冲。观察到的光电流在脉冲后缘的指数衰减区域归因于孔向传感器阴极的漂移,伴随着它们被带负电荷的铬中心捕获。根据所得结果,确定了所研究样品中孔洞的寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Hole photocurrent dynamics in HR-GaAs:Cr ionizing radiation sensors

Hole photocurrent dynamics in HR-GaAs:Cr ionizing radiation sensors

The results of a study of hole transport in chromium-compensated gallium arsenide (HR-GaAs:Cr) sensors using a transient current technique and a numerical simulation of the photoresponse of an HR-GaAs:Cr sensor to a single pulse of infrared radiation are presented. The objects of research are the HR-GaAs:Cr sensors with a mesh metal contact to which a positive potential is applied. It is established that when the sensor is irradiated from the mesh anode, the electrons drift in the horizontal direction to the sensor strips, leading to the formation of a photocurrent pulse in the electrical circuit with a duration shorter than 1 ns. The observed areas of exponential decay of the photocurrent at the pulse trailing edges are attributed to the drift of holes towards the sensor cathode, accompanied by their capture by negatively charged chromium centers. Based on the results obtained, the lifetime of holes in the samples under study is determined.

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来源期刊
Russian Physics Journal
Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.00
自引率
50.00%
发文量
208
审稿时长
3-6 weeks
期刊介绍: Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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