A. V. Trukhanov, V. A. Turchenko, V. G. Kostishin, S. V. Trukhanov, I. A. Hrekau
{"title":"双取代m型钡六铁氧体在单相区的磁性能","authors":"A. V. Trukhanov, V. A. Turchenko, V. G. Kostishin, S. V. Trukhanov, I. A. Hrekau","doi":"10.1007/s10854-025-15825-5","DOIUrl":null,"url":null,"abstract":"<div><p>Main idea of the paper is to find confirmation of the mechanism of chemical substitution by isovalent ions with a large-ion radius (in this case Bi ions) in the structure of M-type hexagonal ferrite. There are two hypotheses on the distribution pattern of large-radius substituent ions in the hexaferrite structure. According to one hypothesis, the substitution should occur in B positions (by substituting Fe<sup>3+</sup> ions) of AFe<sub>12</sub>O<sub>19</sub>. This is reasonable due to the isovalence of the Bi and Fe ions and is supported by the stoichiometry. According to the second hypothesis, the substitution should occur in A positions (Bi<sup>3+</sup> can substitute for a commensurate Ba<sup>2+</sup> ion). This is reasonable due to the ionic size of the Ba and Bi ions and the tolerance factor principle. BaFe<sub>12-x</sub>Bi<sub>x</sub>O<sub>19</sub> (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions were produced by solid-state reactions. There are a lot of techniques used to investigate prepared samples. It was determined that the single-phase region is 0.1 ≤ x ≤ 0.5. It was shown that samples with 0.1 ≤ x ≤ 0.5 contain only one phase that can be described in the frame of P6<sub>3</sub>/mmc. For the sample with x = 0.6, impurity phases were observed: BiFeO<sub>3</sub> (3.45 vol.%) and BiO<sub>2</sub> (1.44 vol.%). It was shown that the increase of the Bi concentration from 0.1 to 0.6 leads to a decrease in the main magnetic parameters: saturation magnetization from 53.48 to 51.45 emu/g; remnant magnetization from 27.91 to 23.71 emu/g; and coercivity from 2.6 to 1.3 kOe. Based on concentration dependences of the main magnetic parameters, we suggest that B-site substitution is realized in BaFe<sub>12-x</sub>Bi<sub>x</sub>O<sub>19</sub> (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magnetic properties of Bi-substituted M-type Barium hexaferrites in the region of single-phase state\",\"authors\":\"A. V. Trukhanov, V. A. Turchenko, V. G. Kostishin, S. V. Trukhanov, I. A. Hrekau\",\"doi\":\"10.1007/s10854-025-15825-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Main idea of the paper is to find confirmation of the mechanism of chemical substitution by isovalent ions with a large-ion radius (in this case Bi ions) in the structure of M-type hexagonal ferrite. There are two hypotheses on the distribution pattern of large-radius substituent ions in the hexaferrite structure. According to one hypothesis, the substitution should occur in B positions (by substituting Fe<sup>3+</sup> ions) of AFe<sub>12</sub>O<sub>19</sub>. This is reasonable due to the isovalence of the Bi and Fe ions and is supported by the stoichiometry. According to the second hypothesis, the substitution should occur in A positions (Bi<sup>3+</sup> can substitute for a commensurate Ba<sup>2+</sup> ion). This is reasonable due to the ionic size of the Ba and Bi ions and the tolerance factor principle. BaFe<sub>12-x</sub>Bi<sub>x</sub>O<sub>19</sub> (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions were produced by solid-state reactions. There are a lot of techniques used to investigate prepared samples. It was determined that the single-phase region is 0.1 ≤ x ≤ 0.5. It was shown that samples with 0.1 ≤ x ≤ 0.5 contain only one phase that can be described in the frame of P6<sub>3</sub>/mmc. For the sample with x = 0.6, impurity phases were observed: BiFeO<sub>3</sub> (3.45 vol.%) and BiO<sub>2</sub> (1.44 vol.%). It was shown that the increase of the Bi concentration from 0.1 to 0.6 leads to a decrease in the main magnetic parameters: saturation magnetization from 53.48 to 51.45 emu/g; remnant magnetization from 27.91 to 23.71 emu/g; and coercivity from 2.6 to 1.3 kOe. Based on concentration dependences of the main magnetic parameters, we suggest that B-site substitution is realized in BaFe<sub>12-x</sub>Bi<sub>x</sub>O<sub>19</sub> (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15825-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15825-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Magnetic properties of Bi-substituted M-type Barium hexaferrites in the region of single-phase state
Main idea of the paper is to find confirmation of the mechanism of chemical substitution by isovalent ions with a large-ion radius (in this case Bi ions) in the structure of M-type hexagonal ferrite. There are two hypotheses on the distribution pattern of large-radius substituent ions in the hexaferrite structure. According to one hypothesis, the substitution should occur in B positions (by substituting Fe3+ ions) of AFe12O19. This is reasonable due to the isovalence of the Bi and Fe ions and is supported by the stoichiometry. According to the second hypothesis, the substitution should occur in A positions (Bi3+ can substitute for a commensurate Ba2+ ion). This is reasonable due to the ionic size of the Ba and Bi ions and the tolerance factor principle. BaFe12-xBixO19 (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions were produced by solid-state reactions. There are a lot of techniques used to investigate prepared samples. It was determined that the single-phase region is 0.1 ≤ x ≤ 0.5. It was shown that samples with 0.1 ≤ x ≤ 0.5 contain only one phase that can be described in the frame of P63/mmc. For the sample with x = 0.6, impurity phases were observed: BiFeO3 (3.45 vol.%) and BiO2 (1.44 vol.%). It was shown that the increase of the Bi concentration from 0.1 to 0.6 leads to a decrease in the main magnetic parameters: saturation magnetization from 53.48 to 51.45 emu/g; remnant magnetization from 27.91 to 23.71 emu/g; and coercivity from 2.6 to 1.3 kOe. Based on concentration dependences of the main magnetic parameters, we suggest that B-site substitution is realized in BaFe12-xBixO19 (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.