二价掺杂Li1.3Al0.3Ti1.7 (PO4)3固体电解质对锂离子电池结构行为和离子电导率的增强研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
S. Selvakumar, S. C. Vella Durai, Indira Sundaram, S. Sudharthini
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引用次数: 0

摘要

固态电解质(sse)由于其改进的安全特性、高能量密度和不可燃特性,代表了电动汽车(ev)和电子设备的未来动力解决方案。基于nasion的Li1.3Al0.3Ti1.7 (PO4) 3-LATP结构在氧化物基电解质中处于领先地位,在空气中表现出优异的锂离子导电性和稳定性。然而,高性能氧化物基电解质的发展面临着挑战,因为它们具有天然的刚性和脆弱特性,这阻碍了阴极和阳极之间理想界面的形成。在基于latp的固体电解质中,位于TiO6八面体和PO4四面体之间的M1-M2空隙是锂离子传输的主要途径,通过掺杂可以增强其电导率。本研究探讨了在Li1.3Al0.3Ti1.7 (PO4)3基电解质中引入二价离子,拓宽离子传导途径,从而提高离子电导率。通过淬火法制备掺杂Li1.3Al0.3Ti1.7 (PO4)3样品,先熔融后转化为玻璃,然后进行研磨、单轴压缩成型、烧结,最后通过扫描电镜(SEM)、x射线衍射(XRD)和阻抗测量对其进行分析。电化学评价表明,与LATP相比,二价掺入的LATP电解质在373 ~ 773 K的低温下具有更好的结构性能和稳定的高离子电导率性能。这项开创性的研究强调了混合固体电解质的潜力,该电解质集成了mg掺杂的LATP,是实用固态锂电池的有前途的候选者。在热处理过程中,LiTi2(PO4)3形成结晶,形成的电解质晶格参数值受掺杂离子类型和数量的影响,每种二价离子在晶格和M1-M2瓶颈结构中引起不同的畸变。值得注意的是,在镁离子浓度为3 mol%的情况下,掺杂导致锂离子的电导率提高到3.41 × 10−3 S/cm,由于离子传导路径的拓宽,电导率比LATP (1.83 × 10−5 S/cm)提高了三倍。综上所述,在基于latp的固体电解质中掺杂适当的二价阳离子是一种很有前途的提高性能的方法,具有许多潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A study on the enhancement of structural behavior and ionic conductivity of divalent-doped Li1.3Al0.3Ti1.7 (PO4)3 solid electrolytes for lithium-ion batteries

Solid-state electrolytes (SSEs) represent a promising future power solution for electric vehicles (EVs) and electronic devices, owing to their improved safety characteristics, high energy density, and non-flammable properties. The NASICON-based Li1.3Al0.3Ti1.7 (PO4)3—LATP structure is leading the way among oxide-based electrolytes, showcasing excellent Li-ion conductivity and stability in air. However, the development of high-performing oxide-based electrolytes poses challenges owing to their naturally rigid and fragile characteristics, which hinder the formation of an ideal interface between the cathode and anode. The M1–M2 voids situated between the TiO6 octahedra and PO4 tetrahedra in a LATP-based solid electrolyte serve as a primary pathway for lithium-ion transport, which can be enhanced for increased conductivity through doping. This study investigates the introduction of divalent ions into the Li1.3Al0.3Ti1.7 (PO4)3-based electrolyte, widening the ion-conduction pathway thereby boosting ion conductivity. Creating doped Li1.3Al0.3Ti1.7 (PO4)3 samples is performed via quenching method with melting before transforming into glass, followed by grinding, uniaxial compression molding, and sintering, after which they undergo analysis through scanning electron microscopy (SEM), X-ray diffraction (XRD), as well as impedance resistance measurements. The electrochemical evaluation indicated that the divalent incorporated LATP electrolytes displayed better structural behavior and consistent high ionic conductivity performance at low operating temperatures ranging 373–773 K when compared to LATP. This groundbreaking research underscores the potential of hybrid solid electrolytes that integrate Mg-doped LATP as a promising candidate for practical solid-state lithium batteries. The thermal treatment leads to the formation of LiTi2(PO4)3, crystallizing to produce an electrolyte whose lattice parameter values are influenced by the type and amount of dopant ion, with each divalent ion inducing different distortions in the lattice and M1–M2 bottleneck structure. Notably, doping resulted in a structural change that boosted Li-ion conductivity to 3.41 × 10−3 S/cm at a 3 mol% magnesium ion concentration, with the threefold increase in conductivity compared to LATP (1.83 × 10−5 S/cm) attributable to the widening of the ion-conduction path. In summary, doping an LATP-based solid electrolyte with an appropriate divalent cation presents a promising method for enhancing performance, with numerous potential applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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