超短中红外激光脉冲下硅的非晶化

IF 1.3 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-06-25 DOI:10.1134/S0021364025606049

N. I. Busleev, P. P. Pakholchuk, N. A. Smirnov

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引用次数: 0

摘要

实验研究了不同能量密度、不同曝光时间、波长为4.0 ~ 5.4 μm的中红外超短激光脉冲对380 μm厚Si（111）晶片表面非晶化的影响。在这个光谱范围内，测量了硅非晶化的阈值影响。在5000nm波长激光脉冲的影响下，材料的体积分数和非晶相厚度与激光脉冲的影响有一定的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Amorphization of Silicon Exposed to Ultrashort Mid-Infrared Laser Pulses

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Amorphization of Silicon Exposed to Ultrashort Mid-Infrared Laser Pulses

The amorphization of the surface of a 380-μm-thick crystalline Si(111) wafer exposed to 150-fs ultrashort laser pulses of the mid-infrared region of 4.0–5.4 μm with variable energy density and exposure time has been experimentally studied. For this spectral range, the threshold fluences for silicon amorphization have been measured. The dependence of the volume fraction and thickness of the amorphous phase of the material on the fluence and the number of laser pulses at a wavelength of 5000 nm has been established.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.