中子衍射法测定氮化硅的热膨胀系数

IF 2.9 4区工程技术 Q3 CHEMISTRY, PHYSICAL

International Journal of Thermophysics Pub Date : 2025-06-25 DOI:10.1007/s10765-025-03594-6

Geoffrey Swift

引用次数: 0

摘要

利用飞行时间中子衍射获得了GS-44氮化硅在20 ~ 1500℃范围内的衍射图。使用Rietveld分析方法对这些模式进行了细化。从精细衍射数据中获得的晶格参数作为温度的函数，可以确定在此温度范围内氮化硅的温度相关热膨胀系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

$Coefficient of Thermal Expansion of Si3N4 via Neutron Diffraction$

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Coefficient of Thermal Expansion of Si3N4 via Neutron Diffraction

Time-of-flight Neutron Diffraction was used to obtain diffraction patterns for GS-44 silicon nitride from 20 °C to 1500 °C. These patterns were refined using the Rietveld analysis method. Lattice parameters obtained as a function of temperature from refined diffraction data allowed determination of temperature-dependent thermal expansion coefficients for silicon nitride over this temperature range.

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来源期刊

International Journal of Thermophysics 物理-力学

CiteScore

4.10

自引率

9.10%

发文量

179

审稿时长

5 months

期刊介绍： International Journal of Thermophysics serves as an international medium for the publication of papers in thermophysics, assisting both generators and users of thermophysical properties data. This distinguished journal publishes both experimental and theoretical papers on thermophysical properties of matter in the liquid, gaseous, and solid states (including soft matter, biofluids, and nano- and bio-materials), on instrumentation and techniques leading to their measurement, and on computer studies of model and related systems. Studies in all ranges of temperature, pressure, wavelength, and other relevant variables are included.