q-变形莫尔斯势的Schrödinger方程精确解的量子信息测量

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Allan R. P. Moreira, Abdelmalek Bouzenada, Faizuddin Ahmed
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引用次数: 0

摘要

我们提出了一个全面的数值和分析研究的信息理论措施,特别是香农熵在位置(\(S_x\))和动量(\(S_{p_x}\))空间,对一个非相对论费米子受q变形Pöschl-Teller-like双曲势,包括与q变形莫尔斯势的比较。通过系统地改变变形参数q、逆长度尺度\(\alpha\)和潜在深度\(V_0\),我们研究了它们对量子态的空间局域化、不确定性以及全局和局部信息含量的综合影响。我们的结果表明,q诱导了\(S_x\)和\(S_{p_x}\)之间的可控权衡,同时保留了它们的和;\(\alpha\)主要增强了总不确定性,表明增加了离域;\(V_0\)倾向于以动量扩散为代价的空间定位。所有构型都符合Bialynicki-Birula-Mycielski (BBM)不等式,证实了该方法的鲁棒性。这些发现强调了潜在几何和量子信息测量之间的深层联系,对变形量子系统、相对论扩展和违反洛伦兹对称的框架具有潜在的意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum information measurements of the exact solution of the Schrödinger equation for a q-deformed Morse potential

We present a comprehensive numerical and analytical study of information-theoretic measures–specifically, the Shannon entropy in position (\(S_x\)) and momentum (\(S_{p_x}\)) spaces, for a non-relativistic fermion subject to a q-deformed Pöschl–Teller-like hyperbolic potential, including comparisons with the q-deformed Morse potential. By systematically varying the deformation parameter q, the inverse length scale \(\alpha\), and the potential depth \(V_0\), we investigate their combined influence on spatial localization, uncertainty, and the global and local information content of the quantum states. Our results show that q induces a controllable trade-off between \(S_x\) and \(S_{p_x}\), while preserving their sum; \(\alpha\) predominantly enhances total uncertainty, signaling increased delocalization; and \(V_0\) favors spatial localization at the cost of momentum spread. All configurations obey the Bialynicki-Birula–Mycielski (BBM) inequality, confirming the robustness of the approach. These findings underscore the deep connection between potential geometry and quantum information measures, with prospective implications for deformed quantum systems, relativistic extensions, and Lorentz symmetry-violating frameworks.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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