推进太阳能电池效率:从铯铅卤化钙钛矿分析的见解

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M. El-Mrabet, A. Bouich, A. Tarbi, T. Chtouki, H. Erguig, A. Zawadzka, A. Marjanowska, A. Migalska-zalas, A. Kityk, A. Andrushchak, G. Myronchuk, B. Sahraoui
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引用次数: 0

摘要

在本研究中,我们利用太阳能电池电容模拟器(SCAPS)对铯铅卤化钙钛矿太阳能电池的性能进行了数值模拟。提出了三种电池结构:Yb/ZnO/CsPbI3/CuI/Au, Sm/TiO2/CsPbBr3/CuO2/Au和Yb/TiO2/CsPbCl3/CuO2/Au。通过调整有源层厚度、空穴输运层(HTL)、电子输运层(ETL)、金属功函数(WF)、缺陷、掺杂水平、串联电阻(RS)和分流电阻(RSh)等参数对太阳能电池进行优化。这些研究表明,光伏性能受到关键因素的强烈影响,包括ETL和HTL层的质量、金属功函数、串联和分流电阻、缺陷密度以及吸收层的厚度和掺杂浓度。CsPbX3 (X = I, Br和Cl)基钙钛矿太阳能电池的效率分别为26.68%,16.76%和14.97%。基于CsPbCl3和CsPbBr3的电池表现出优异的稳定性,而外部量子效率(EQE)测量显示,CsPbI3电池在整个可见光和近红外光谱上都有响应,表明与CsPbBr3和CsPbCl3相比,cspbbi3电池具有更高的光伏应用潜力。综上所述,我们发现当扩散长度(L)大于~ 600 nm时,CsPbBr3和CsPbCl3电池内部电场的减小促进了核心层内的电子-空穴复合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advancing solar cell efficiency: insights from cesium lead halide perovskite analysis

In this study, we investigated the performance of cesium lead halide perovskite solar cells through numerical simulations using a Solar Cell Capacitance Simulator (SCAPS). Three cell configurations are proposed: Yb/ZnO/CsPbI3/CuI/Au, Sm/TiO2/CsPbBr3/CuO2/Au, and Yb/TiO2/CsPbCl3/CuO2/Au. The solar cell was optimized by adjusting parameters such as the active layer thickness, hole transport layer (HTL), electron transport layer (ETL), metal work function (WF), defects, doping levels, series resistance (RS), and shunt resistance (RSh). These studies indicate that photovoltaic performance is strongly influenced by critical factors, including the quality of the ETL and HTL layers, metal work function, series and shunt resistances, defect density, as well as the thickness and doping concentration of the absorber layers. The efficiencies of CsPbX3 (X = I, Br, and Cl)-based perovskite solar cells were 26.68%, 16.76%, and 14.97%, respectively. The cells based on CsPbCl3 and CsPbBr3 exhibited superior stability, while the external quantum efficiency (EQE) measurements revealed that the CsPbI3 cell responded across the entire visible and near-infrared spectrum, indicating its higher potential for photovoltaic applications compared to CsPbBr3 and CsPbCl3. In conclusion, we found that for diffusion lengths (L) greater than ~ 600 nm, the reduction in the internal electric field in CsPbBr3 and CsPbCl3 cells promotes electron–hole recombination within the core layers.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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