{"title":"水热合成掺银SnS材料的热电性能研究","authors":"Sanju Choudhari, Dinesh Kumar Kedia, Manisha Yadav, Pradeep kumar, Pura Ram","doi":"10.1007/s10854-025-15761-4","DOIUrl":null,"url":null,"abstract":"<div><p>In recent years, tin sulfide (SnS), a layered chalcogenide material, has attracted considerable interest for its low toxicity, earth abundance, and promising thermoelectric (TE) properties. In this study, polycrystalline SnS samples—both undoped and Ag (2 at% and 4 at%)-doped were synthesized via a cost-effective and time-efficient hydrothermal method aimed at enhancing TE performance via nanostructuring and grain boundary scattering. X-ray diffraction (XRD) confirmed the phase purity, while Field Emission Scanning Electron Microscopy (FESEM) revealed sheet-like morphologies, and Energy-Dispersive X-ray (EDX) spectroscopy confirmed the elemental composition of the sample. UV–Vis spectroscopy indicated a reduced band gap of 1.28 eV for the 4 at% Ag-doped SnS, suggesting enhanced electronic properties. Fourier Transform Infrared (FTIR) spectroscopy identified the chemical bonds and functional groups present, and Thermogravimetric analysis (TGA) confirmed thermal stability up to 600 °C. Notably, undoped SnS exhibited the lowest thermal conductivity (0.18 W·m<sup>−1</sup>·K⁻1 at 620 K), while Ag-doped samples showed slightly higher values due to increased carrier concentration (n) from hole doping. Electrical conductivity significantly improved after Ag doping, reaching 45.34 S/m at 620 K. However, the Seebeck coefficient values decreased for Ag-doped samples in comparison to undoped SnS due to the increase in n. To the best of our knowledge, the measured thermal conductivities are the lowest reported for doped SnS at this temperature. Our study presents that the hydrothermal method for synthesis is an effective and scalable approach for synthesizing SnS-based thermoelectric materials with ultralow thermal conductivity, making it a viable alternative to more expensive and complex fabrication techniques.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring thermoelectric properties of hydrothermally synthesized Ag-doped SnS material\",\"authors\":\"Sanju Choudhari, Dinesh Kumar Kedia, Manisha Yadav, Pradeep kumar, Pura Ram\",\"doi\":\"10.1007/s10854-025-15761-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In recent years, tin sulfide (SnS), a layered chalcogenide material, has attracted considerable interest for its low toxicity, earth abundance, and promising thermoelectric (TE) properties. In this study, polycrystalline SnS samples—both undoped and Ag (2 at% and 4 at%)-doped were synthesized via a cost-effective and time-efficient hydrothermal method aimed at enhancing TE performance via nanostructuring and grain boundary scattering. X-ray diffraction (XRD) confirmed the phase purity, while Field Emission Scanning Electron Microscopy (FESEM) revealed sheet-like morphologies, and Energy-Dispersive X-ray (EDX) spectroscopy confirmed the elemental composition of the sample. UV–Vis spectroscopy indicated a reduced band gap of 1.28 eV for the 4 at% Ag-doped SnS, suggesting enhanced electronic properties. Fourier Transform Infrared (FTIR) spectroscopy identified the chemical bonds and functional groups present, and Thermogravimetric analysis (TGA) confirmed thermal stability up to 600 °C. Notably, undoped SnS exhibited the lowest thermal conductivity (0.18 W·m<sup>−1</sup>·K⁻1 at 620 K), while Ag-doped samples showed slightly higher values due to increased carrier concentration (n) from hole doping. Electrical conductivity significantly improved after Ag doping, reaching 45.34 S/m at 620 K. However, the Seebeck coefficient values decreased for Ag-doped samples in comparison to undoped SnS due to the increase in n. To the best of our knowledge, the measured thermal conductivities are the lowest reported for doped SnS at this temperature. Our study presents that the hydrothermal method for synthesis is an effective and scalable approach for synthesizing SnS-based thermoelectric materials with ultralow thermal conductivity, making it a viable alternative to more expensive and complex fabrication techniques.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15761-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15761-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Exploring thermoelectric properties of hydrothermally synthesized Ag-doped SnS material
In recent years, tin sulfide (SnS), a layered chalcogenide material, has attracted considerable interest for its low toxicity, earth abundance, and promising thermoelectric (TE) properties. In this study, polycrystalline SnS samples—both undoped and Ag (2 at% and 4 at%)-doped were synthesized via a cost-effective and time-efficient hydrothermal method aimed at enhancing TE performance via nanostructuring and grain boundary scattering. X-ray diffraction (XRD) confirmed the phase purity, while Field Emission Scanning Electron Microscopy (FESEM) revealed sheet-like morphologies, and Energy-Dispersive X-ray (EDX) spectroscopy confirmed the elemental composition of the sample. UV–Vis spectroscopy indicated a reduced band gap of 1.28 eV for the 4 at% Ag-doped SnS, suggesting enhanced electronic properties. Fourier Transform Infrared (FTIR) spectroscopy identified the chemical bonds and functional groups present, and Thermogravimetric analysis (TGA) confirmed thermal stability up to 600 °C. Notably, undoped SnS exhibited the lowest thermal conductivity (0.18 W·m−1·K⁻1 at 620 K), while Ag-doped samples showed slightly higher values due to increased carrier concentration (n) from hole doping. Electrical conductivity significantly improved after Ag doping, reaching 45.34 S/m at 620 K. However, the Seebeck coefficient values decreased for Ag-doped samples in comparison to undoped SnS due to the increase in n. To the best of our knowledge, the measured thermal conductivities are the lowest reported for doped SnS at this temperature. Our study presents that the hydrothermal method for synthesis is an effective and scalable approach for synthesizing SnS-based thermoelectric materials with ultralow thermal conductivity, making it a viable alternative to more expensive and complex fabrication techniques.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.