Megha Patel, Abhishek Patel, Mohit Tannarana, Pratik M. Pataniya, Chetan Zankat, Ankurkumar J. Khimani, G. K. Solanki
{"title":"探索层状GeSe单晶的光探测特性","authors":"Megha Patel, Abhishek Patel, Mohit Tannarana, Pratik M. Pataniya, Chetan Zankat, Ankurkumar J. Khimani, G. K. Solanki","doi":"10.1007/s00339-025-08915-y","DOIUrl":null,"url":null,"abstract":"<div><p>The lamellar Transition metal chalcogenides (TMC) semiconductors from IV-VI group have attracted researchers due to their tunable properties. Here, the author demonstrated the growth of GeSe single crystals using direct vapour transport (DVT) technique. The structural property of grown crystals is studied by powder X-ray diffraction (PXRD). The transmission electron microscopy (TEM) of the grown crystal revealed that the grown material is single-crystalline. UV-Visible-NIR (UV-VIS-NIR) spectroscopy is carried out to study the band gap of GeSe crystal. The vibrational modes of GeSe are studied by RAMAN spectroscopy. The photodetector based on GeSe crystal is fabricated and its temporal photoresponse is studied under 670 nm Light of power intensity 3 mW/cm<sup>2</sup> and white Light of different intensities. The detector showed a fast response with a response time 0.1 s. The photocurrent 30.222 µA is achieved under 670 nm Light. In addition, the enhanced photoresponsivity of 105.79 mA W<sup>−1</sup> and specific detectivity of 4.80 × 10<sup>10</sup> Jones are also achieved under 670 nm laser illumination with 3 mW/cm<sup>2</sup>.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring the photodetection properties of layered GeSe single-crystal\",\"authors\":\"Megha Patel, Abhishek Patel, Mohit Tannarana, Pratik M. Pataniya, Chetan Zankat, Ankurkumar J. Khimani, G. K. Solanki\",\"doi\":\"10.1007/s00339-025-08915-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The lamellar Transition metal chalcogenides (TMC) semiconductors from IV-VI group have attracted researchers due to their tunable properties. Here, the author demonstrated the growth of GeSe single crystals using direct vapour transport (DVT) technique. The structural property of grown crystals is studied by powder X-ray diffraction (PXRD). The transmission electron microscopy (TEM) of the grown crystal revealed that the grown material is single-crystalline. UV-Visible-NIR (UV-VIS-NIR) spectroscopy is carried out to study the band gap of GeSe crystal. The vibrational modes of GeSe are studied by RAMAN spectroscopy. The photodetector based on GeSe crystal is fabricated and its temporal photoresponse is studied under 670 nm Light of power intensity 3 mW/cm<sup>2</sup> and white Light of different intensities. The detector showed a fast response with a response time 0.1 s. The photocurrent 30.222 µA is achieved under 670 nm Light. In addition, the enhanced photoresponsivity of 105.79 mA W<sup>−1</sup> and specific detectivity of 4.80 × 10<sup>10</sup> Jones are also achieved under 670 nm laser illumination with 3 mW/cm<sup>2</sup>.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":\"131 10\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-025-08915-y\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-025-08915-y","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Exploring the photodetection properties of layered GeSe single-crystal
The lamellar Transition metal chalcogenides (TMC) semiconductors from IV-VI group have attracted researchers due to their tunable properties. Here, the author demonstrated the growth of GeSe single crystals using direct vapour transport (DVT) technique. The structural property of grown crystals is studied by powder X-ray diffraction (PXRD). The transmission electron microscopy (TEM) of the grown crystal revealed that the grown material is single-crystalline. UV-Visible-NIR (UV-VIS-NIR) spectroscopy is carried out to study the band gap of GeSe crystal. The vibrational modes of GeSe are studied by RAMAN spectroscopy. The photodetector based on GeSe crystal is fabricated and its temporal photoresponse is studied under 670 nm Light of power intensity 3 mW/cm2 and white Light of different intensities. The detector showed a fast response with a response time 0.1 s. The photocurrent 30.222 µA is achieved under 670 nm Light. In addition, the enhanced photoresponsivity of 105.79 mA W−1 and specific detectivity of 4.80 × 1010 Jones are also achieved under 670 nm laser illumination with 3 mW/cm2.
期刊介绍：
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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