用高电子迁移率晶体管探测氦上漂浮的电子

IF 1.4 3区物理与天体物理 Q4 PHYSICS, APPLIED

Journal of Low Temperature Physics Pub Date : 2025-01-22 DOI:10.1007/s10909-024-03256-1

M. M. Feldman, G. Fuchs, T. Liu, L. A. D’Imperio, M. D. Henry, E. A. Shaner, S. A. Lyon

{"title":"用高电子迁移率晶体管探测氦上漂浮的电子","authors":"M. M. Feldman, G. Fuchs, T. Liu, L. A. D’Imperio, M. D. Henry, E. A. Shaner, S. A. Lyon","doi":"10.1007/s10909-024-03256-1","DOIUrl":null,"url":null,"abstract":"<div><p>We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of <span>\\(\\thicksim\\)</span> 2<span>\\(\\frac{e}{\\sqrt{Hz}}\\)</span> at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.</p></div>","PeriodicalId":641,"journal":{"name":"Journal of Low Temperature Physics","volume":"219 5-6","pages":"242 - 251"},"PeriodicalIF":1.4000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors\",\"authors\":\"M. M. Feldman, G. Fuchs, T. Liu, L. A. D’Imperio, M. D. Henry, E. A. Shaner, S. A. Lyon\",\"doi\":\"10.1007/s10909-024-03256-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of <span>\\\\(\\\\thicksim\\\\)</span> 2<span>\\\\(\\\\frac{e}{\\\\sqrt{Hz}}\\\\)</span> at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.</p></div>\",\"PeriodicalId\":641,\"journal\":{\"name\":\"Journal of Low Temperature Physics\",\"volume\":\"219 5-6\",\"pages\":\"242 - 251\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-01-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Low Temperature Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10909-024-03256-1\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Low Temperature Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10909-024-03256-1","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种使用现成的砷化镓高电子迁移率晶体管（hemt）构建的定制低温级联放大器电路对漂浮在超流氦上的少量电子的低频测量。我们将该电路与电荷耦合器件（CCD）集成在氦上传输电子，并对其性能进行了表征。我们表明，该电路在102 kHz时的信噪比（SNR）为\(\thicksim\) 2 \(\frac{e}{\sqrt{Hz}}\)，比以前的实现提高了一个数量级，并且为高频谐振器的少量电子传感提供了令人信服的替代方案。

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Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of \(\thicksim\) 2\(\frac{e}{\sqrt{Hz}}\) at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

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来源期刊

Journal of Low Temperature Physics 物理-物理：凝聚态物理

CiteScore

3.30

自引率

25.00%

发文量

245

审稿时长

1 months

期刊介绍： The Journal of Low Temperature Physics publishes original papers and review articles on all areas of low temperature physics and cryogenics, including theoretical and experimental contributions. Subject areas include: Quantum solids, liquids and gases; Superfluidity; Superconductivity; Condensed matter physics; Experimental techniques; The Journal encourages the submission of Rapid Communications and Special Issues.