Aligned hierarchical Zn(OH)2/GaN heterostructure grown on grooved sapphire for UV detection

In this study, a novel aligned hierarchical Zn(OH)₂/GaN heterostructure was fabricated at low temperature through a solution-based approach, offering a promising strategy for anisotropic ultraviolet (UV) photodetection. The structure consists of vertically aligned two-dimensional Zn(OH)₂ nanosheets grown epitaxially on a lateral epitaxial overgrowth uncoalesced GaN film. Photoresponse measurements reveal an excellent photoresponse performance with anisotropic photoresponse properties. This anisotropy stems from the directional charge transport pathways facilitated by the aligned Zn(OH)₂ nanosheet/uncoalesced GaN structure. These findings provide a new method to design high-performance UV detection sensors based on GaN grown using lateral epitaxy.