Substructure of β-SiC Films Synthesized on the Surface of Vacuum and Air Cleavage of Mono-Si

The substructure, orientation, and morphology of thin β-SiC films formed on the surface of a vacuum cleavage (juvenile surface) and an air cleavage (nonjuvenile surface) of a silicon single crystal during carbidization in the process of carbon arc evaporation have been studied by TEM, RHEED, SEM, and AFM methods. The effect of the juvenile surface in the synthesis of β-SiC films on Si is shown, which manifests itself in the fact that the β-SiC phase nucleates uniformly on the juvenile surface, forming a nanocrystalline oriented film at 1123 K; on the nonjuvenile surface, the carbide phase is formed at the points of breakdown of a thin film of natural silicon oxide.