{"title":"基于生长的CsPbBr3纳米线阵列与CdSSe纳米带主干平面内集成的光电互连应用","authors":"Xue Xia \n (, ), Long Chen \n (, ), Yaonan Xiong \n (, ), Qi Deng \n (, ), Wei Mou \n (, ), Junxin Gong \n (, ), Wenbin Zhang \n (, ), Shulin Chen \n (, ), Qinglin Zhang \n (, )","doi":"10.1007/s40843-025-3435-3","DOIUrl":null,"url":null,"abstract":"<div><p>Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, photodetectors (PDs), etc., which provide abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr<sub>3</sub> NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr<sub>3</sub>, but also break the growth symmetry of CsPbBr<sub>3</sub> NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr<sub>3</sub> NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr<sub>3</sub> NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr<sub>3</sub> NW was illuminated by a focused 457 nm laser at a distance of 37.5 µm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×10<sup>3</sup>, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.</p></div>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"68 8","pages":"2697 - 2705"},"PeriodicalIF":7.4000,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks\",\"authors\":\"Xue Xia \\n (, ), Long Chen \\n (, ), Yaonan Xiong \\n (, ), Qi Deng \\n (, ), Wei Mou \\n (, ), Junxin Gong \\n (, ), Wenbin Zhang \\n (, ), Shulin Chen \\n (, ), Qinglin Zhang \\n (, )\",\"doi\":\"10.1007/s40843-025-3435-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, photodetectors (PDs), etc., which provide abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr<sub>3</sub> NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr<sub>3</sub>, but also break the growth symmetry of CsPbBr<sub>3</sub> NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr<sub>3</sub> NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr<sub>3</sub> NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr<sub>3</sub> NW was illuminated by a focused 457 nm laser at a distance of 37.5 µm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×10<sup>3</sup>, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.</p></div>\",\"PeriodicalId\":773,\"journal\":{\"name\":\"Science China Materials\",\"volume\":\"68 8\",\"pages\":\"2697 - 2705\"},\"PeriodicalIF\":7.4000,\"publicationDate\":\"2025-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40843-025-3435-3\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40843-025-3435-3","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks
Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, photodetectors (PDs), etc., which provide abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr3 NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr3, but also break the growth symmetry of CsPbBr3 NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr3 NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr3 NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr3 NW was illuminated by a focused 457 nm laser at a distance of 37.5 µm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×103, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.
期刊介绍:
Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.