Can Wang, Zhuo-Xuan Xie, Ling-Yu Zhang, Le Wei, Jing Guo
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Influence of non-uniform distribution of doped atoms in semiconductors on high-order harmonic generation
We theoretically investigated the effect of non-uniform distribution of acceptor-doped atoms on high-order harmonic generation (HHG) in doped semiconductors, employing two models related to actual doped semiconductors: linear and Gaussian distributions. Compared with uniformly doped semiconductors, we found that non-uniformly doped semiconductors with impurities localized on one side of the atomic chain exhibit enhanced below-band-gap harmonics and suppressed the second plateau of harmonics. Additionally, we observed distinct even harmonics in the low-energy region of HHG from non-uniformly doped semiconductors, as non-uniform doping breaks the translational symmetry of the crystal lattice. Moreover, by analyzing the energy band structure, the time-dependent population imaging (TDPI) and time-frequency analysis, we have illustrated the reasons for the harmonic differences between non-uniformly and uniformly doped semiconductors.
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Features publication of experimental and theoretical investigations in applied physics
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Coverage includes laser physics, linear and nonlinear optics, ultrafast phenomena, photonic devices, optical and laser materials, quantum optics, laser spectroscopy of atoms, molecules and clusters, and more
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Publishing essential research results in two of the most important areas of applied physics, both Applied Physics sections figure among the top most cited journals in this field.
In addition to regular papers Applied Physics B: Lasers and Optics features invited reviews. Fields of topical interest are covered by feature issues. The journal also includes a rapid communication section for the speedy publication of important and particularly interesting results.
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