等离子体聚焦GaN薄膜：沉积镜头和退火效果的研究

IF 2.8 3区物理与天体物理 Q3 CHEMISTRY, PHYSICAL

Radiation Physics and Chemistry Pub Date : 2025-09-22 DOI:10.1016/j.radphyschem.2025.113320

L. Anjo , G. Davoodi , S. Tatikyan , A. Grigoryan , G. Amatuni

{"title":"等离子体聚焦GaN薄膜：沉积镜头和退火效果的研究","authors":"L. Anjo , G. Davoodi , S. Tatikyan , A. Grigoryan , G. Amatuni","doi":"10.1016/j.radphyschem.2025.113320","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shots number and post-deposition annealing on both optical and structural properties. The 2, 4, and 6 PF shot exposed films were first processed and then systematically characterized by several analytic techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.</div><div>The results demonstrated that increasing the number of plasma shots (2, 4 and 6 shots) and employing thermal annealing led to substantial improvements in crystallinity, surface morphology, and PL emission peak shifts. The results prove that varying deposition and annealing parameters, the PF method can be used effectively to tailor GaN thin films for optoelectronic devices.</div></div>","PeriodicalId":20861,"journal":{"name":"Radiation Physics and Chemistry","volume":"239 ","pages":"Article 113320"},"PeriodicalIF":2.8000,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaN thin films via plasma focus: A study of deposition shots and annealing effects\",\"authors\":\"L. Anjo , G. Davoodi , S. Tatikyan , A. Grigoryan , G. Amatuni\",\"doi\":\"10.1016/j.radphyschem.2025.113320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shots number and post-deposition annealing on both optical and structural properties. The 2, 4, and 6 PF shot exposed films were first processed and then systematically characterized by several analytic techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.</div><div>The results demonstrated that increasing the number of plasma shots (2, 4 and 6 shots) and employing thermal annealing led to substantial improvements in crystallinity, surface morphology, and PL emission peak shifts. The results prove that varying deposition and annealing parameters, the PF method can be used effectively to tailor GaN thin films for optoelectronic devices.</div></div>\",\"PeriodicalId\":20861,\"journal\":{\"name\":\"Radiation Physics and Chemistry\",\"volume\":\"239 \",\"pages\":\"Article 113320\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radiation Physics and Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0969806X25008126\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0969806X25008126","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

利用等离子体聚焦（PF）装置在p型Si（100）衬底上沉积氮化镓（GaN）薄膜，探讨了等离子体注射次数和沉积后退火对薄膜光学和结构性能的影响。首先对2、4和6 PF曝光膜进行处理，然后通过x射线衍射（XRD）、能量色散x射线光谱（EDX）、场发射扫描电子显微镜（FESEM）、紫外-可见-近红外光谱（UV-VIS-NIR）和光致发光（PL）测量等多种分析技术对其进行系统表征。结果表明，增加等离子体发射次数（2次、4次和6次）和采用热退火可以显著改善晶体结晶度、表面形貌和PL发射峰位移。结果表明，改变沉积和退火参数，PF方法可以有效地用于光电器件的GaN薄膜的定制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

GaN thin films via plasma focus: A study of deposition shots and annealing effects

Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shots number and post-deposition annealing on both optical and structural properties. The 2, 4, and 6 PF shot exposed films were first processed and then systematically characterized by several analytic techniques such as X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.

The results demonstrated that increasing the number of plasma shots (2, 4 and 6 shots) and employing thermal annealing led to substantial improvements in crystallinity, surface morphology, and PL emission peak shifts. The results prove that varying deposition and annealing parameters, the PF method can be used effectively to tailor GaN thin films for optoelectronic devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Radiation Physics and Chemistry 化学-核科学技术

CiteScore

5.60

自引率

17.20%

发文量

574

审稿时长

12 weeks

期刊介绍： Radiation Physics and Chemistry is a multidisciplinary journal that provides a medium for publication of substantial and original papers, reviews, and short communications which focus on research and developments involving ionizing radiation in radiation physics, radiation chemistry and radiation processing. The journal aims to publish papers with significance to an international audience, containing substantial novelty and scientific impact. The Editors reserve the rights to reject, with or without external review, papers that do not meet these criteria. This could include papers that are very similar to previous publications, only with changed target substrates, employed materials, analyzed sites and experimental methods, report results without presenting new insights and/or hypothesis testing, or do not focus on the radiation effects.