Taek-Hyeon Kim , Jeong-Hyeon Baek , Sang-Il Kim , Tae-Hoon Kim , Ji-Hye Shim , Hak-Sung Kim
{"title":"电镀电流密度和后退火对先进半导体封装重分布层翘曲度和可靠性的影响","authors":"Taek-Hyeon Kim , Jeong-Hyeon Baek , Sang-Il Kim , Tae-Hoon Kim , Ji-Hye Shim , Hak-Sung Kim","doi":"10.1016/j.matdes.2025.114732","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, the warpage and thermal fatigue reliability of the redistribution layer (RDL) were improved by optimizing the electroplating current density and post-annealing process to control residual stress. The residual stress of the electroplated copper layer and the cure shrinkage of the photo-imageable dielectric (PID) were evaluated using bi-layer beam specimens designed based on Timoshenko beam theory. To analyze the mechanism of residual stress generation in the copper layer, the grain size was quantified using X-ray diffraction (XRD) and the coefficient of thermal expansion (CTE) was measured using a thermomechanical analyzer (TMA). Warpage and thermal fatigue reliability were evaluated under varying electroplating current densities and post-annealing conditions. These experimental results were validated by comparing them with stress analysis data obtained through finite element analysis (FEA). In the RDL structure, the optimized current density condition effectively reduced the residual tensile stress in the electroplated copper layer and improved both warpage and thermal fatigue life. In addition, the post-annealing relieved cure shrinkage-induced stress in the PID, enhancing the reliability of the RDL structure. The results of this study are expected to contribute to improved yield and thermomechanical reliability in advanced semiconductor packages.</div></div>","PeriodicalId":383,"journal":{"name":"Materials & Design","volume":"259 ","pages":"Article 114732"},"PeriodicalIF":7.9000,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of electroplating current density and post-annealing on the warpage and reliability of redistribution layer for advanced semiconductor package\",\"authors\":\"Taek-Hyeon Kim , Jeong-Hyeon Baek , Sang-Il Kim , Tae-Hoon Kim , Ji-Hye Shim , Hak-Sung Kim\",\"doi\":\"10.1016/j.matdes.2025.114732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, the warpage and thermal fatigue reliability of the redistribution layer (RDL) were improved by optimizing the electroplating current density and post-annealing process to control residual stress. The residual stress of the electroplated copper layer and the cure shrinkage of the photo-imageable dielectric (PID) were evaluated using bi-layer beam specimens designed based on Timoshenko beam theory. To analyze the mechanism of residual stress generation in the copper layer, the grain size was quantified using X-ray diffraction (XRD) and the coefficient of thermal expansion (CTE) was measured using a thermomechanical analyzer (TMA). Warpage and thermal fatigue reliability were evaluated under varying electroplating current densities and post-annealing conditions. These experimental results were validated by comparing them with stress analysis data obtained through finite element analysis (FEA). In the RDL structure, the optimized current density condition effectively reduced the residual tensile stress in the electroplated copper layer and improved both warpage and thermal fatigue life. In addition, the post-annealing relieved cure shrinkage-induced stress in the PID, enhancing the reliability of the RDL structure. The results of this study are expected to contribute to improved yield and thermomechanical reliability in advanced semiconductor packages.</div></div>\",\"PeriodicalId\":383,\"journal\":{\"name\":\"Materials & Design\",\"volume\":\"259 \",\"pages\":\"Article 114732\"},\"PeriodicalIF\":7.9000,\"publicationDate\":\"2025-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials & Design\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0264127525011529\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials & Design","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0264127525011529","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of electroplating current density and post-annealing on the warpage and reliability of redistribution layer for advanced semiconductor package
In this study, the warpage and thermal fatigue reliability of the redistribution layer (RDL) were improved by optimizing the electroplating current density and post-annealing process to control residual stress. The residual stress of the electroplated copper layer and the cure shrinkage of the photo-imageable dielectric (PID) were evaluated using bi-layer beam specimens designed based on Timoshenko beam theory. To analyze the mechanism of residual stress generation in the copper layer, the grain size was quantified using X-ray diffraction (XRD) and the coefficient of thermal expansion (CTE) was measured using a thermomechanical analyzer (TMA). Warpage and thermal fatigue reliability were evaluated under varying electroplating current densities and post-annealing conditions. These experimental results were validated by comparing them with stress analysis data obtained through finite element analysis (FEA). In the RDL structure, the optimized current density condition effectively reduced the residual tensile stress in the electroplated copper layer and improved both warpage and thermal fatigue life. In addition, the post-annealing relieved cure shrinkage-induced stress in the PID, enhancing the reliability of the RDL structure. The results of this study are expected to contribute to improved yield and thermomechanical reliability in advanced semiconductor packages.
期刊介绍:
Materials and Design is a multi-disciplinary journal that publishes original research reports, review articles, and express communications. The journal focuses on studying the structure and properties of inorganic and organic materials, advancements in synthesis, processing, characterization, and testing, the design of materials and engineering systems, and their applications in technology. It aims to bring together various aspects of materials science, engineering, physics, and chemistry.
The journal explores themes ranging from materials to design and aims to reveal the connections between natural and artificial materials, as well as experiment and modeling. Manuscripts submitted to Materials and Design should contain elements of discovery and surprise, as they often contribute new insights into the architecture and function of matter.