单晶和非晶ZnGa2O4作为栅极介质在β-Ga2O3 MOSCAP器件中的高温电学比较研究

IF 5.7 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Research Bulletin Pub Date : 2025-09-18 DOI:10.1016/j.materresbull.2025.113791

N. Manikanthababu , Subrata Karmakar , Ishtiaq Firoz Shiam , Injamamul Hoque Emu , Ariful Haque , Ravi Droopad

{"title":"单晶和非晶ZnGa2O4作为栅极介质在β-Ga2O3 MOSCAP器件中的高温电学比较研究","authors":"N. Manikanthababu , Subrata Karmakar , Ishtiaq Firoz Shiam , Injamamul Hoque Emu , Ariful Haque , Ravi Droopad","doi":"10.1016/j.materresbull.2025.113791","DOIUrl":null,"url":null,"abstract":"<div><div>Spinel ZnGa2O4, a wide bandgap semiconductor with high breakdown voltage and thermal stability, is promising for power electronics. Amorphous and single-crystal ZnGa2O4 thin films were deposited on n-type β-Ga2O3 substrates. Au/ZnGa2O4/β-Ga2O3 MOSCAPs were evaluated up to 300 °C. Single-crystal (111) ZnGa2O4 showed a 5.06 eV bandgap, confirmed by XPS. Reverse leakage current rose by nearly three orders of magnitude from room temperature to 300 °C. Poole–Frenkel (PF) analysis revealed a 0.58 V trap and 0.47–0.23 eV activation energy. Amorphous ZnGa2O4 films (5.11 eV bandgap) exhibited leakage current increases of five orders of magnitude and PF traps at 0.6 V with 0.45–0.43 eV activation energies. C–V analysis showed significant flat-band voltage shifts and slope changes in both devices, indicating rising oxide and interface trap densities with temperature.</div></div>","PeriodicalId":18265,"journal":{"name":"Materials Research Bulletin","volume":"194 ","pages":"Article 113791"},"PeriodicalIF":5.7000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative high-temperature electrical study of single crystal and amorphous ZnGa2O4 as a gate dielectric in β-Ga2O3 MOSCAP devices\",\"authors\":\"N. Manikanthababu , Subrata Karmakar , Ishtiaq Firoz Shiam , Injamamul Hoque Emu , Ariful Haque , Ravi Droopad\",\"doi\":\"10.1016/j.materresbull.2025.113791\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Spinel ZnGa2O4, a wide bandgap semiconductor with high breakdown voltage and thermal stability, is promising for power electronics. Amorphous and single-crystal ZnGa2O4 thin films were deposited on n-type β-Ga2O3 substrates. Au/ZnGa2O4/β-Ga2O3 MOSCAPs were evaluated up to 300 °C. Single-crystal (111) ZnGa2O4 showed a 5.06 eV bandgap, confirmed by XPS. Reverse leakage current rose by nearly three orders of magnitude from room temperature to 300 °C. Poole–Frenkel (PF) analysis revealed a 0.58 V trap and 0.47–0.23 eV activation energy. Amorphous ZnGa2O4 films (5.11 eV bandgap) exhibited leakage current increases of five orders of magnitude and PF traps at 0.6 V with 0.45–0.43 eV activation energies. C–V analysis showed significant flat-band voltage shifts and slope changes in both devices, indicating rising oxide and interface trap densities with temperature.</div></div>\",\"PeriodicalId\":18265,\"journal\":{\"name\":\"Materials Research Bulletin\",\"volume\":\"194 \",\"pages\":\"Article 113791\"},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2025-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Research Bulletin\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0025540825004982\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Research Bulletin","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0025540825004982","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

尖晶石ZnGa2O4是一种具有高击穿电压和热稳定性的宽禁带半导体，在电力电子领域具有广阔的应用前景。在n型β-Ga2O3衬底上沉积了非晶和单晶ZnGa2O4薄膜。Au/ZnGa2O4/β-Ga2O3 MOSCAPs在300℃下进行了评价。单晶（111）ZnGa2O4表现出5.06 eV的带隙。从室温到300°C，反向泄漏电流上升了近三个数量级。Poole-Frenkel （PF）分析表明，该阱为0.58 V，活化能为0.47 ~ 0.23 eV。非晶态ZnGa2O4薄膜（5.11 eV带隙）的漏电流增加了5个数量级，在0.6 V处产生了PF陷阱，活化能为0.45-0.43 eV。C-V分析显示，两种器件的平带电压变化和斜率变化显著，表明氧化物和界面陷阱密度随温度升高而上升。

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A comparative high-temperature electrical study of single crystal and amorphous ZnGa2O4 as a gate dielectric in β-Ga2O3 MOSCAP devices

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A comparative high-temperature electrical study of single crystal and amorphous ZnGa2O4 as a gate dielectric in β-Ga2O3 MOSCAP devices

Spinel ZnGa₂O₄, a wide bandgap semiconductor with high breakdown voltage and thermal stability, is promising for power electronics. Amorphous and single-crystal ZnGa₂O₄ thin films were deposited on n-type β-Ga₂O₃ substrates. Au/ZnGa₂O₄/β-Ga₂O₃ MOSCAPs were evaluated up to 300 °C. Single-crystal (111) ZnGa₂O₄ showed a 5.06 eV bandgap, confirmed by XPS. Reverse leakage current rose by nearly three orders of magnitude from room temperature to 300 °C. Poole–Frenkel (PF) analysis revealed a 0.58 V trap and 0.47–0.23 eV activation energy. Amorphous ZnGa₂O₄ films (5.11 eV bandgap) exhibited leakage current increases of five orders of magnitude and PF traps at 0.6 V with 0.45–0.43 eV activation energies. C–V analysis showed significant flat-band voltage shifts and slope changes in both devices, indicating rising oxide and interface trap densities with temperature.

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来源期刊

Materials Research Bulletin 工程技术-材料科学：综合

CiteScore

9.80

自引率

5.60%

发文量

372

审稿时长

42 days

期刊介绍： Materials Research Bulletin is an international journal reporting high-impact research on processing-structure-property relationships in functional materials and nanomaterials with interesting electronic, magnetic, optical, thermal, mechanical or catalytic properties. Papers purely on thermodynamics or theoretical calculations (e.g., density functional theory) do not fall within the scope of the journal unless they also demonstrate a clear link to physical properties. Topics covered include functional materials (e.g., dielectrics, pyroelectrics, piezoelectrics, ferroelectrics, relaxors, thermoelectrics, etc.); electrochemistry and solid-state ionics (e.g., photovoltaics, batteries, sensors, and fuel cells); nanomaterials, graphene, and nanocomposites; luminescence and photocatalysis; crystal-structure and defect-structure analysis; novel electronics; non-crystalline solids; flexible electronics; protein-material interactions; and polymeric ion-exchange membranes.