Electromagnetically Induced Transparency in a GaAs Coupled Quantum Dot-Ring.

In this work, the ground and low-lying excited states in a GaAs coupled quantum dot-ring embedded in an AlGaAs cylindrical matrix are computed under the assumption of a finite confinement potential and an axisymmetric model by means of the finite element method and the effective mass approximation. The electron energy levels are studied as functions of the intensity of externally applied electric and magnetic fields. Electromagnetically induced transparency in the ladder configuration and linear optical absorption coefficient are calculated thereupon. Our results suggest that magnetic fields are more suitable than electric fields for controlling the optical properties of this nanostructure. Also, we found that the system's response, however, exhibits a striking asymmetry: while the electromagnetically induced transparency is unexpectedly quenched under positive electric fields due to vanishing dipole transition matrix elements, this limitation is completely overcome by a magnetic field. Its application not only restores optical transparency across the full range of electric field values but also drives substantially larger energy level shifts and clear Aharonov-Bohm oscillations, making it a far more robust tool for controlling the optical properties of confined electrons in dot-ring coupled heterostructures.