Xi Guo, , , Junwei Zeng, , , Jijun Yun*, , , Yalu Zuo, , , Li Xi, , , Xiaoxi Liu*, , and , Baoshan Cui*,
{"title":"用于高性能神经形态器件的楔形Pt/Co/Ta无场自旋-轨道转矩开关。","authors":"Xi Guo, , , Junwei Zeng, , , Jijun Yun*, , , Yalu Zuo, , , Li Xi, , , Xiaoxi Liu*, , and , Baoshan Cui*, ","doi":"10.1021/acsami.5c13941","DOIUrl":null,"url":null,"abstract":"<p >In perpendicularly magnetized heavy-metal/ferromagnetic heterostructures, the spin–orbit torque-induced multilevel switching of magnetic moment offers promising potential for nonvolatile multilevel information storage. Compared with traditional binary memory architectures, this approach provides improved data density and lower power consumption. However, the necessity of an additional in-plane magnetic field to break magnetic symmetry in perpendicularly magnetized heterostructures impedes the integration of spin–orbit torque-driven magnetization switching devices. This work investigates field-free spin–orbit torque switching in obliquely sputtered Pt/Co/Ta heterostructures, demonstrating that the oblique deposition angle determines the tilt of magnetic moments, thereby enabling field-free switching. By adjusting the width and amplitude of current pulses, we implemented multiple resistance states, mimicking synaptic behaviors such as long-term potentiation/long-term depression and excitatory/inhibitory postsynaptic potentials. Besides, linear optimization of magnetization switching curves revealed their compatibility with the rectified linear unit activation function, further highlighting the versatility of this approach for application in artificial neural networks. Finally, a fully connected convolutional neural network utilizing field-free spin–orbit torque devices achieved an impressive classification accuracy of 93.38% on the CIFAR-10 data set, demonstrating the practical feasibility of this technology in advanced machine learning tasks.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 40","pages":"56389–56397"},"PeriodicalIF":8.2000,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field-Free Spin–Orbit Torque Switching in Wedge-Shaped Pt/Co/Ta for High-Performance Neuromorphic Devices\",\"authors\":\"Xi Guo, , , Junwei Zeng, , , Jijun Yun*, , , Yalu Zuo, , , Li Xi, , , Xiaoxi Liu*, , and , Baoshan Cui*, \",\"doi\":\"10.1021/acsami.5c13941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In perpendicularly magnetized heavy-metal/ferromagnetic heterostructures, the spin–orbit torque-induced multilevel switching of magnetic moment offers promising potential for nonvolatile multilevel information storage. Compared with traditional binary memory architectures, this approach provides improved data density and lower power consumption. However, the necessity of an additional in-plane magnetic field to break magnetic symmetry in perpendicularly magnetized heterostructures impedes the integration of spin–orbit torque-driven magnetization switching devices. This work investigates field-free spin–orbit torque switching in obliquely sputtered Pt/Co/Ta heterostructures, demonstrating that the oblique deposition angle determines the tilt of magnetic moments, thereby enabling field-free switching. By adjusting the width and amplitude of current pulses, we implemented multiple resistance states, mimicking synaptic behaviors such as long-term potentiation/long-term depression and excitatory/inhibitory postsynaptic potentials. Besides, linear optimization of magnetization switching curves revealed their compatibility with the rectified linear unit activation function, further highlighting the versatility of this approach for application in artificial neural networks. Finally, a fully connected convolutional neural network utilizing field-free spin–orbit torque devices achieved an impressive classification accuracy of 93.38% on the CIFAR-10 data set, demonstrating the practical feasibility of this technology in advanced machine learning tasks.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 40\",\"pages\":\"56389–56397\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.5c13941\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.5c13941","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Field-Free Spin–Orbit Torque Switching in Wedge-Shaped Pt/Co/Ta for High-Performance Neuromorphic Devices
In perpendicularly magnetized heavy-metal/ferromagnetic heterostructures, the spin–orbit torque-induced multilevel switching of magnetic moment offers promising potential for nonvolatile multilevel information storage. Compared with traditional binary memory architectures, this approach provides improved data density and lower power consumption. However, the necessity of an additional in-plane magnetic field to break magnetic symmetry in perpendicularly magnetized heterostructures impedes the integration of spin–orbit torque-driven magnetization switching devices. This work investigates field-free spin–orbit torque switching in obliquely sputtered Pt/Co/Ta heterostructures, demonstrating that the oblique deposition angle determines the tilt of magnetic moments, thereby enabling field-free switching. By adjusting the width and amplitude of current pulses, we implemented multiple resistance states, mimicking synaptic behaviors such as long-term potentiation/long-term depression and excitatory/inhibitory postsynaptic potentials. Besides, linear optimization of magnetization switching curves revealed their compatibility with the rectified linear unit activation function, further highlighting the versatility of this approach for application in artificial neural networks. Finally, a fully connected convolutional neural network utilizing field-free spin–orbit torque devices achieved an impressive classification accuracy of 93.38% on the CIFAR-10 data set, demonstrating the practical feasibility of this technology in advanced machine learning tasks.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.