{"title":"晶体管的发展:从TFT到TFET及其以后的全面概述","authors":"Umamaheshwar Soma","doi":"10.1007/s40010-025-00915-0","DOIUrl":null,"url":null,"abstract":"<div><p>This paper provides an exhaustive review of the development and advancements in the evolution of various transistor types, such as Thin Film Transistors (TFTs), Silicon-on-Insulator (SOI), High-K Metal Gate Field-Effect Transistors (FETs), FinFETs, Double-Gate Transistors, Trigate Transistors, GAAFETs, and Tunnel Field-Effect Transistors (TFETs). Moreover, it shows how FinFETs can be effectively integrated with high density by using the three-dimensional configuration to improve short-channel effects control. Double-gate transistors can be used instead of MOSFETs with electrostatic control superiority. On the other hand, Trigate Transistors are known for their speed and power efficiency. GAAFETs have gate-all-around architecture, which helps in electrostatic control and minimizes leakage current. Lastly, TFETs operate under reverse bias and have tunneling to conduct current; they are efficient in terms of energy and speed. This review highlights the excellent journey of the development of transistors from the first one in 1947. All the different transistors and their strengths and weaknesses find niches in applications.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"95 2","pages":"113 - 125"},"PeriodicalIF":1.2000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transistor Evolution: A Comprehensive Overview from TFT to TFET and Beyond\",\"authors\":\"Umamaheshwar Soma\",\"doi\":\"10.1007/s40010-025-00915-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper provides an exhaustive review of the development and advancements in the evolution of various transistor types, such as Thin Film Transistors (TFTs), Silicon-on-Insulator (SOI), High-K Metal Gate Field-Effect Transistors (FETs), FinFETs, Double-Gate Transistors, Trigate Transistors, GAAFETs, and Tunnel Field-Effect Transistors (TFETs). Moreover, it shows how FinFETs can be effectively integrated with high density by using the three-dimensional configuration to improve short-channel effects control. Double-gate transistors can be used instead of MOSFETs with electrostatic control superiority. On the other hand, Trigate Transistors are known for their speed and power efficiency. GAAFETs have gate-all-around architecture, which helps in electrostatic control and minimizes leakage current. Lastly, TFETs operate under reverse bias and have tunneling to conduct current; they are efficient in terms of energy and speed. This review highlights the excellent journey of the development of transistors from the first one in 1947. All the different transistors and their strengths and weaknesses find niches in applications.</p></div>\",\"PeriodicalId\":744,\"journal\":{\"name\":\"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences\",\"volume\":\"95 2\",\"pages\":\"113 - 125\"},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2025-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40010-025-00915-0\",\"RegionNum\":4,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","FirstCategoryId":"103","ListUrlMain":"https://link.springer.com/article/10.1007/s40010-025-00915-0","RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
Transistor Evolution: A Comprehensive Overview from TFT to TFET and Beyond
This paper provides an exhaustive review of the development and advancements in the evolution of various transistor types, such as Thin Film Transistors (TFTs), Silicon-on-Insulator (SOI), High-K Metal Gate Field-Effect Transistors (FETs), FinFETs, Double-Gate Transistors, Trigate Transistors, GAAFETs, and Tunnel Field-Effect Transistors (TFETs). Moreover, it shows how FinFETs can be effectively integrated with high density by using the three-dimensional configuration to improve short-channel effects control. Double-gate transistors can be used instead of MOSFETs with electrostatic control superiority. On the other hand, Trigate Transistors are known for their speed and power efficiency. GAAFETs have gate-all-around architecture, which helps in electrostatic control and minimizes leakage current. Lastly, TFETs operate under reverse bias and have tunneling to conduct current; they are efficient in terms of energy and speed. This review highlights the excellent journey of the development of transistors from the first one in 1947. All the different transistors and their strengths and weaknesses find niches in applications.