晶体管的发展:从TFT到TFET及其以后的全面概述

IF 1.2 4区 综合性期刊 Q3 MULTIDISCIPLINARY SCIENCES
Umamaheshwar Soma
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引用次数: 0

摘要

本文对薄膜晶体管(TFTs)、绝缘体上硅晶体管(SOI)、高k金属栅场效应晶体管(fet)、finfet、双栅晶体管、三门晶体管、gaafet和隧道场效应晶体管(tfet)等各种晶体管类型的发展和进步进行了详尽的回顾。此外,还展示了如何利用三维结构有效地将finfet与高密度集成,以改善短通道效应控制。双栅晶体管具有静电控制的优势,可以代替mosfet。另一方面,三角晶体管以其速度和功率效率而闻名。gaafet具有栅极全能结构,有助于静电控制并最大限度地减少泄漏电流。最后,tfet在反向偏置下工作,并具有隧道传导电流;它们在能量和速度方面效率很高。本文回顾了自1947年晶体管问世以来的辉煌历程。所有不同的晶体管及其优缺点都在应用中找到了合适的位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Transistor Evolution: A Comprehensive Overview from TFT to TFET and Beyond

Transistor Evolution: A Comprehensive Overview from TFT to TFET and Beyond

This paper provides an exhaustive review of the development and advancements in the evolution of various transistor types, such as Thin Film Transistors (TFTs), Silicon-on-Insulator (SOI), High-K Metal Gate Field-Effect Transistors (FETs), FinFETs, Double-Gate Transistors, Trigate Transistors, GAAFETs, and Tunnel Field-Effect Transistors (TFETs). Moreover, it shows how FinFETs can be effectively integrated with high density by using the three-dimensional configuration to improve short-channel effects control. Double-gate transistors can be used instead of MOSFETs with electrostatic control superiority. On the other hand, Trigate Transistors are known for their speed and power efficiency. GAAFETs have gate-all-around architecture, which helps in electrostatic control and minimizes leakage current. Lastly, TFETs operate under reverse bias and have tunneling to conduct current; they are efficient in terms of energy and speed. This review highlights the excellent journey of the development of transistors from the first one in 1947. All the different transistors and their strengths and weaknesses find niches in applications.

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来源期刊
CiteScore
2.60
自引率
0.00%
发文量
37
审稿时长
>12 weeks
期刊介绍: To promote research in all the branches of Science & Technology; and disseminate the knowledge and advancements in Science & Technology
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