A Physics Based 3D Analytical Model for Si-SiGe-Si Stacked Channel Tri-gate Junctionless FinFET

Junctionless Fin-field effect transistors (JL-FinFETs) are proposed as promising alternatives to conventional FinFETs due to uniform concentration through the semiconductor region. In this manuscript, the 3-D potential distribution along the stacked Si-SiGe-Si channel for a junctionless (JL) tri-gate (TG) silicon-on-insulator (SOI) FinFET is derived in subthreshold region using the perimeter-weighted summation of a top and side gate metal oxide semiconductor field effect transistor (MOSFET) with appropriate boundary conditions and effective dimensions. The potential equation is utilized to calculate the electric field, and subthreshold drain current. The analytical results are compared with the simulated outcomes by varying the gate length and drain-source (V_DS) voltage. The short channel effects such as subthreshold swing (SS), drain induced barrier lowering (DIBL) are also analyzed. A good acceptance is observed between the mathematical and TCAD simulated data.