Kama Hosea Gobak, Saika Alamin A., Musa Runde, Karwan Wasman Qadir, Muhammad N. Abubakar
{"title":"硅富勒烯吸附有机硫的计算研究:改善环境安全的意义","authors":"Kama Hosea Gobak, Saika Alamin A., Musa Runde, Karwan Wasman Qadir, Muhammad N. Abubakar","doi":"10.1007/s12633-025-03349-w","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the adsorption of dibenzothiophene (DBT) on newly tailored silicon-based fullerene materials for environmental remediation and sensing applications. DBT is a polycyclic aromatic hydrocarbon (PAH) containing sulfur, which is a common impurity present in fossil fuels, automobile emissions, natural resources, and industrial discharges. It contributes to atmospheric acidity, a pioneer of acid rain. Its high toxicity causes lung diseases that affects humans and aquatic animals. The need for its detection and removal is critical to remediating these challenges. This study employs the density functional theory (DFT) approach at the PBE0-D3/LanL2DZ computational method to evaluate the interaction of DBT on newly tailored silicon-based fullerene materials doped with Cu, Ir, and Pt (DBT-Si<sub>59</sub>Cu, DBT-Si<sub>59</sub>Ir, and DBT-Si<sub>59</sub>Pt). The adsorption energies observed ranged from -1.966 to -1.323 eV, indicating strong chemisorption of DBT on all modified silicon-based fullerenes. Si<sub>59</sub>Ir showed the strongest adsorption (-1.966 eV), followed by Si<sub>59</sub>Pt (-1.415 eV) and Si<sub>59</sub>Cu (-1.323 eV). Electronic structure analysis revealed significant charge transfer and increment in dipole moment upon DBT adsorption, with values of 10.415, 10.130, and 8.342 D for DBT-Si<sub>59</sub>Ir, DBT-Si<sub>59</sub>Pt, and DBT-Si<sub>59</sub>Cu, respectively. The HOMO–LUMO energy gaps decreased after adsorption from 0.317, 0.541and 0.461 eV in Si<sub>59</sub>Cu, Si<sub>59</sub>Ir, and Si<sub>59</sub>Pt to 0.028, 0.049, and 0.163 eV in DBT-Si<sub>59</sub>Cu, DBT-Si<sub>59</sub>Ir, and DBT-Si<sub>59</sub>Pt, respectively. This indicates enhanced reactivity. Our findings highlight the effectiveness of transition metal-doped silicon-based fullerenes in enhancing the efficiency of DBT capture. The strong adsorption characteristics and electronic properties of these materials suggest their potential as efficient adsorbents for DBT removal in environmental applications. This study introduces a novel application of silicon-based fullerenes for DBT adsorption, providing insights into their potential for future nanomaterial-based desulfurization strategies.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 10","pages":"2299 - 2312"},"PeriodicalIF":3.3000,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Computational Study of Organosulfur Adsorption on Silicon Fullerenes: Implications for Improving Environmental Safety\",\"authors\":\"Kama Hosea Gobak, Saika Alamin A., Musa Runde, Karwan Wasman Qadir, Muhammad N. Abubakar\",\"doi\":\"10.1007/s12633-025-03349-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study investigates the adsorption of dibenzothiophene (DBT) on newly tailored silicon-based fullerene materials for environmental remediation and sensing applications. DBT is a polycyclic aromatic hydrocarbon (PAH) containing sulfur, which is a common impurity present in fossil fuels, automobile emissions, natural resources, and industrial discharges. It contributes to atmospheric acidity, a pioneer of acid rain. Its high toxicity causes lung diseases that affects humans and aquatic animals. The need for its detection and removal is critical to remediating these challenges. This study employs the density functional theory (DFT) approach at the PBE0-D3/LanL2DZ computational method to evaluate the interaction of DBT on newly tailored silicon-based fullerene materials doped with Cu, Ir, and Pt (DBT-Si<sub>59</sub>Cu, DBT-Si<sub>59</sub>Ir, and DBT-Si<sub>59</sub>Pt). The adsorption energies observed ranged from -1.966 to -1.323 eV, indicating strong chemisorption of DBT on all modified silicon-based fullerenes. Si<sub>59</sub>Ir showed the strongest adsorption (-1.966 eV), followed by Si<sub>59</sub>Pt (-1.415 eV) and Si<sub>59</sub>Cu (-1.323 eV). Electronic structure analysis revealed significant charge transfer and increment in dipole moment upon DBT adsorption, with values of 10.415, 10.130, and 8.342 D for DBT-Si<sub>59</sub>Ir, DBT-Si<sub>59</sub>Pt, and DBT-Si<sub>59</sub>Cu, respectively. The HOMO–LUMO energy gaps decreased after adsorption from 0.317, 0.541and 0.461 eV in Si<sub>59</sub>Cu, Si<sub>59</sub>Ir, and Si<sub>59</sub>Pt to 0.028, 0.049, and 0.163 eV in DBT-Si<sub>59</sub>Cu, DBT-Si<sub>59</sub>Ir, and DBT-Si<sub>59</sub>Pt, respectively. This indicates enhanced reactivity. Our findings highlight the effectiveness of transition metal-doped silicon-based fullerenes in enhancing the efficiency of DBT capture. The strong adsorption characteristics and electronic properties of these materials suggest their potential as efficient adsorbents for DBT removal in environmental applications. This study introduces a novel application of silicon-based fullerenes for DBT adsorption, providing insights into their potential for future nanomaterial-based desulfurization strategies.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 10\",\"pages\":\"2299 - 2312\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03349-w\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03349-w","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
A Computational Study of Organosulfur Adsorption on Silicon Fullerenes: Implications for Improving Environmental Safety
This study investigates the adsorption of dibenzothiophene (DBT) on newly tailored silicon-based fullerene materials for environmental remediation and sensing applications. DBT is a polycyclic aromatic hydrocarbon (PAH) containing sulfur, which is a common impurity present in fossil fuels, automobile emissions, natural resources, and industrial discharges. It contributes to atmospheric acidity, a pioneer of acid rain. Its high toxicity causes lung diseases that affects humans and aquatic animals. The need for its detection and removal is critical to remediating these challenges. This study employs the density functional theory (DFT) approach at the PBE0-D3/LanL2DZ computational method to evaluate the interaction of DBT on newly tailored silicon-based fullerene materials doped with Cu, Ir, and Pt (DBT-Si59Cu, DBT-Si59Ir, and DBT-Si59Pt). The adsorption energies observed ranged from -1.966 to -1.323 eV, indicating strong chemisorption of DBT on all modified silicon-based fullerenes. Si59Ir showed the strongest adsorption (-1.966 eV), followed by Si59Pt (-1.415 eV) and Si59Cu (-1.323 eV). Electronic structure analysis revealed significant charge transfer and increment in dipole moment upon DBT adsorption, with values of 10.415, 10.130, and 8.342 D for DBT-Si59Ir, DBT-Si59Pt, and DBT-Si59Cu, respectively. The HOMO–LUMO energy gaps decreased after adsorption from 0.317, 0.541and 0.461 eV in Si59Cu, Si59Ir, and Si59Pt to 0.028, 0.049, and 0.163 eV in DBT-Si59Cu, DBT-Si59Ir, and DBT-Si59Pt, respectively. This indicates enhanced reactivity. Our findings highlight the effectiveness of transition metal-doped silicon-based fullerenes in enhancing the efficiency of DBT capture. The strong adsorption characteristics and electronic properties of these materials suggest their potential as efficient adsorbents for DBT removal in environmental applications. This study introduces a novel application of silicon-based fullerenes for DBT adsorption, providing insights into their potential for future nanomaterial-based desulfurization strategies.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.